| No. |
Part Name |
Description |
Manufacturer |
| 871 |
BSR76 |
MOSPOWER N-Channel Enhancement Mode Transistor 240V 0.2A |
Siliconix |
| 872 |
BSS138N |
Low Voltage MOSFETs - SOT23, 60V, 3.5Ohm, 0.23A |
Infineon |
| 873 |
BSS138W |
Low Voltage MOSFETs - SOT323, 60V, 3.5Ohm, 0.28A |
Infineon |
| 874 |
BSS7728N |
Low Voltage MOSFETs - SOT23, 60V, RDSon = 5.0Ohm, 0.2A |
Infineon |
| 875 |
BSS87 |
Low Voltage MOSFETs - Small Signal MOSFET, 240V, SOT-89, RDSon=6.0 Ohm, 0.29A, LL |
Infineon |
| 876 |
BSX52 |
Trans GP BJT NPN 25V 0.2A 3-Pin TO-18 |
New Jersey Semiconductor |
| 877 |
BSX52A |
Trans GP BJT NPN 50V 0.2A 3-Pin TO-18 |
New Jersey Semiconductor |
| 878 |
BUZ20 |
12A/ 100V/ 0.200 Ohm/ N-Channel Power MOSFET |
Intersil |
| 879 |
BUZ72A |
9A, 100V, 0.250 Ohm, N-Channel Power MOSFET |
Fairchild Semiconductor |
| 880 |
BUZ72A |
9A/ 100V/ 0.250 Ohm/ N-Channel Power MOSFET |
Intersil |
| 881 |
BZV86C3V2 |
Diode 10V 0.2A 2-Pin ALF |
New Jersey Semiconductor |
| 882 |
C4258-01 |
Infrared power supply; fast response of 50ps; active area: 0.2mm x 0.2mm; picosecond photodetector |
Hamamatsu Corporation |
| 883 |
C4258-01 |
Infrared power supply; fast response of 50ps; active area: 0.2mm x 0.2mm; picosecond photodetector |
Hamamatsu Corporation |
| 884 |
C4258-02 |
Infrared power supply; fast response of 50ps; active area: 0.2mm x 0.2mm; picosecond photodetector |
Hamamatsu Corporation |
| 885 |
C4258-02 |
Infrared power supply; fast response of 50ps; active area: 0.2mm x 0.2mm; picosecond photodetector |
Hamamatsu Corporation |
| 886 |
C4258-03 |
Infrared power supply; fast response of 50ps; active area: 0.2mm x 0.2mm; picosecond photodetector |
Hamamatsu Corporation |
| 887 |
C4258-03 |
Infrared power supply; fast response of 50ps; active area: 0.2mm x 0.2mm; picosecond photodetector |
Hamamatsu Corporation |
| 888 |
CD6676 |
30 V, 0.2 Amp schottky barrier rectifier chip |
Compensated Devices Incorporated |
| 889 |
CD6677 |
40 V, 0.2 Amp schottky barrier rectifier chip |
Compensated Devices Incorporated |
| 890 |
CIL351 |
0.300W General Purpose NPN Metal Can Transistor. 70V Vceo, 0.200A Ic, 100 - 250 hFE. |
Continental Device India Limited |
| 891 |
CIL352 |
0.300W General Purpose NPN Metal Can Transistor. 70V Vceo, 0.200A Ic, 200 - 480 hFE. |
Continental Device India Limited |
| 892 |
CL-CD2400-10PCI |
V(cc): 7V; 0.25W; 4-channel, multi-protocol communications controller |
Cirrus Logic |
| 893 |
CL-CD2400-10QC-I |
V(cc): 7V; 0.25W; 4-channel, multi-protocol communications controller |
Cirrus Logic |
| 894 |
CMBA847E |
0.150W General Purpose NPN SMD Transistor. 50V Vceo, 0.200A Ic, 150 - 300 hFE. |
Continental Device India Limited |
| 895 |
CMBA847F |
0.150W General Purpose NPN SMD Transistor. 50V Vceo, 0.200A Ic, 250 - 500 hFE. |
Continental Device India Limited |
| 896 |
CMBA847G |
0.150W General Purpose NPN SMD Transistor. 50V Vceo, 0.200A Ic, 400 - 800 hFE. |
Continental Device India Limited |
| 897 |
CMBA857E |
0.200W General Purpose PNP SMD Transistor. 50V Vceo, 0.200A Ic, 150 - 300 hFE. |
Continental Device India Limited |
| 898 |
CMBA857E |
0.200W General Purpose PNP SMD Transistor. 50V Vceo, 0.200A Ic, 150 - 300 hFE. |
Continental Device India Limited |
| 899 |
CMBA857F |
0.200W General Purpose PNP SMD Transistor. 50V Vceo, 0.200A Ic, 250 - 500 hFE. |
Continental Device India Limited |
| 900 |
CMBA857F |
0.200W General Purpose PNP SMD Transistor. 50V Vceo, 0.200A Ic, 250 - 500 hFE. |
Continental Device India Limited |
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