No. |
Part Name |
Description |
Manufacturer |
841 |
GN1L4L |
MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR |
NEC |
842 |
GN1L4M |
MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR |
NEC |
843 |
GN1L4Z |
MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR |
NEC |
844 |
HD2 |
HIGH SPEED SWITCHING DIODES |
Diodes |
845 |
HD2A |
HIGH SPEED SWITCHING DIODES |
Zetex Semiconductors |
846 |
HD2A-5D |
SOT 23 SILICON PLANAR HIGH SPEED SWITCHING DIODES |
etc |
847 |
HD3 |
HIGH SPEED SWITCHING DIODES |
Diodes |
848 |
HD3A |
HIGH SPEED SWITCHING DIODES |
Zetex Semiconductors |
849 |
HD3A-4D |
SOT 23 SILICON PLANAR HIGH SPEED SWITCHING DIODES |
etc |
850 |
HD4 |
HIGH SPEED SWITCHING DIODES |
Diodes |
851 |
HD4A |
HIGH SPEED SWITCHING DIODES |
Zetex Semiconductors |
852 |
HD4A-7D |
SOT 23 SILICON PLANAR HIGH SPEED SWITCHING DIODES |
etc |
853 |
HN1D01F |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
854 |
HN1D01FU |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
855 |
HN1D02F |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
856 |
HN1D02FU |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
857 |
HN1D03F |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
858 |
HN1D03FU |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
859 |
HN1J02FU |
Field Effect Transistor Silicon P Channel Mos Type High Speed Switching Applications Analog Switch Applications |
TOSHIBA |
860 |
HN1K02FU |
Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch Applications |
TOSHIBA |
861 |
HN1K03FU |
Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch Applications |
TOSHIBA |
862 |
HN1K04FU |
Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch Applications |
TOSHIBA |
863 |
HN1K05FU |
Field Effect Transistor Silicon N Channel MOS Type For Portable Devices High Speed Switching Applications Interface Applications |
TOSHIBA |
864 |
HN1K06FU |
Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch Applications |
TOSHIBA |
865 |
HN1L02FU |
Field Effect Transistor Silicon N-P Channel MOS Type High Speed Switching Applications Analog Switch Applications |
TOSHIBA |
866 |
HN1L03FU |
Field Effect Transistor Silicon N-P Channel MOS Type High Speed Switching Applications Analog Switch Applications |
TOSHIBA |
867 |
HN2D01F |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
868 |
HN2D01FU |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
869 |
HN2D02FU |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
870 |
HN2D02FUTW1T1 |
Ultra High Speed Switching Diodes |
ON Semiconductor |
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