| No. |
Part Name |
Description |
Manufacturer |
| 931 |
KTK5162 |
N CHANNEL MOS FIELD EFFECT TRANSISTOR (ULTRA-HIGH SPEED SWITCHING/ ANALOG SWITCH) |
Korea Electronics (KEC) |
| 932 |
KTX301 |
EPITAXIAL PLANAR PNP TRANSISTOR SILICON EPITAXIAL PLANAR TYPE DIODE (GENERAL PURPOSE/ ULTRA HIGH SPEED SWITCHING) |
Korea Electronics (KEC) |
| 933 |
MA1702 |
PNP germanium transistor for audio amplifier and medium speed switching applications |
Motorola |
| 934 |
MA1703 |
PNP germanium transistor for audio amplifier and medium speed switching applications |
Motorola |
| 935 |
MA1704 |
PNP germanium transistor for audio amplifier and medium speed switching applications |
Motorola |
| 936 |
MA1705 |
PNP germanium transistor for audio amplifier and medium speed switching applications |
Motorola |
| 937 |
MA1706 |
PNP germanium transistor for audio amplifier and medium speed switching applications |
Motorola |
| 938 |
MA1707 |
PNP germanium transistor for audio amplifier and medium speed switching applications |
Motorola |
| 939 |
MA1708 |
PNP germanium transistor for audio amplifier and medium speed switching applications |
Motorola |
| 940 |
MC2831 |
Small signal diode. For high speed switching application. Silicon epitaxial type. Peak reverse voltage 75 V. |
Isahaya Electronics Corporation |
| 941 |
MC2832 |
Small signal diode. For high speed switching application. Silicon epitaxial type. Peak reverse voltage 75 V. |
Isahaya Electronics Corporation |
| 942 |
MC2833 |
Small signal diode. For high speed switching application. Silicon epitaxial type. Peak reverse voltage 75 V. |
Isahaya Electronics Corporation |
| 943 |
MC2834 |
Small signal diode. For high speed switching application. Silicon epitaxial type. Peak reverse voltage 75 V. |
Isahaya Electronics Corporation |
| 944 |
MC2837 |
Small signal diode. For high speed switching application. Silicon epitaxial type. Peak reverse voltage 85 V. |
Isahaya Electronics Corporation |
| 945 |
MC2838 |
Small signal diode. For high speed switching application. Silicon epitaxial type. Peak reverse voltage 75 V. |
Isahaya Electronics Corporation |
| 946 |
MC2839 |
Small signal diode. For high speed switching application. Silicon epitaxial type. Peak reverse voltage 85 V. |
Isahaya Electronics Corporation |
| 947 |
MC2841 |
FOR HIGH SPEED SWITCHING APPLICATION SILICON EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 948 |
MC2844 |
Small signal diode. For high speed switching application. Silicon epitaxial type. Peak reverse voltage 75 V. |
Isahaya Electronics Corporation |
| 949 |
MC2845 |
Small signal diode. For high speed switching application. Silicon epitaxial type. Peak reverse voltage 35 V. |
Isahaya Electronics Corporation |
| 950 |
MC2846 |
Small signal diode. For high speed switching application. Silicon epitaxial type. Peak reverse voltage 75 V. |
Isahaya Electronics Corporation |
| 951 |
MC2848 |
FOR HIGH SPEED SWITCHING APPLICATION SILICON EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 952 |
MC2852 |
Diode. For high speed switching application. Silicon epitaxial type. Peak reverse voltage 75 V. |
Isahaya Electronics Corporation |
| 953 |
MC2854 |
Diode. For high speed switching application. Silicon epitaxial type. Peak reverse voltage 75 V. |
Isahaya Electronics Corporation |
| 954 |
MC961 |
Diode. For high speed switching application. Silicon epitaxial type. Peak reverse voltage 75 V. |
Isahaya Electronics Corporation |
| 955 |
MC981 |
Diode. For high speed switching application. Silicon epitaxial type. Peak reverse voltage 75 V. |
Isahaya Electronics Corporation |
| 956 |
MC982 |
Diode. For high speed switching application. Silicon epitaxial type. Peak reverse voltage 35 V. |
Isahaya Electronics Corporation |
| 957 |
MCH3312 |
P-Channel MOSFET for Ultra-high Speed Switching |
ON Semiconductor |
| 958 |
MCH3406 |
Ultra-high speed switching |
ON Semiconductor |
| 959 |
MCH3412 |
Ultra-high speed switching |
ON Semiconductor |
| 960 |
MCH6307 |
P-Channel MOSFET for Ultra-high Speed Switching Applications |
ON Semiconductor |
| | | |
