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Datasheets for -EFFECT TRANS

Datasheets found :: 1197
Page: | 25 | 26 | 27 | 28 | 29 | 30 | 31 | 32 | 33 |
No. Part Name Description Manufacturer
841 IRF330 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 5.5A. General Electric Solid State
842 IRF331 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 5.5A. General Electric Solid State
843 IRF332 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 4.5A. General Electric Solid State
844 IRF333 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 4.5A. General Electric Solid State
845 IRF350 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 15A. General Electric Solid State
846 IRF351 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 15A. General Electric Solid State
847 IRF352 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 13A. General Electric Solid State
848 IRF353 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 13A. General Electric Solid State
849 IRF420 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 2.5A. General Electric Solid State
850 IRF421 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 2.5A. General Electric Solid State
851 IRF422 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 2.0A. General Electric Solid State
852 IRF423 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 2.0A. General Electric Solid State
853 IRF430 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 4.5A. General Electric Solid State
854 IRF431 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 4.5A. General Electric Solid State
855 IRF432 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 4.0A. General Electric Solid State
856 IRF433 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 4.0A. General Electric Solid State
857 IRF450 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 13A. General Electric Solid State
858 IRF451 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 13A. General Electric Solid State
859 IRF452 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 12A. General Electric Solid State
860 IRF453 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 12A. General Electric Solid State
861 IRF510 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 4.0A. General Electric Solid State
862 IRF511 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current(at Tc 25deg) 4.0A. General Electric Solid State
863 IRF512 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 3.5A. General Electric Solid State
864 IRF513 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current(at Tc 25deg) 3.5A. General Electric Solid State
865 IRF530 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 14A. General Electric Solid State
866 IRF531 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current(at Tc 25deg) 14A. General Electric Solid State
867 IRF532 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 12A. General Electric Solid State
868 IRF533 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current(at Tc 25deg) 12A. General Electric Solid State
869 IRF610 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 2.5A. General Electric Solid State
870 IRF611 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 2.5A. General Electric Solid State


Datasheets found :: 1197
Page: | 25 | 26 | 27 | 28 | 29 | 30 | 31 | 32 | 33 |



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