No. |
Part Name |
Description |
Manufacturer |
871 |
IRF823 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 2.0A. |
General Electric Solid State |
872 |
IRF830 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 4.5A. |
General Electric Solid State |
873 |
IRF831 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 4.5A. |
General Electric Solid State |
874 |
IRF832 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 4.0A. |
General Electric Solid State |
875 |
IRF833 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 4.0A. |
General Electric Solid State |
876 |
IRFF110 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 3.5A. |
General Electric Solid State |
877 |
IRFF111 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 3.5A. |
General Electric Solid State |
878 |
IRFF112 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 3.0A. |
General Electric Solid State |
879 |
IRFF113 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 3.0A. |
General Electric Solid State |
880 |
IRFF120 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 6.0A. |
General Electric Solid State |
881 |
IRFF121 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 50V. Continuous drain current 6.0A. |
General Electric Solid State |
882 |
IRFF122 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 5.0A. |
General Electric Solid State |
883 |
IRFF123 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 5.0A. |
General Electric Solid State |
884 |
IRFF130 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 8.0A. |
General Electric Solid State |
885 |
IRFF131 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 8.0A. |
General Electric Solid State |
886 |
IRFF132 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 7.0A. |
General Electric Solid State |
887 |
IRFF133 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 7.0A. |
General Electric Solid State |
888 |
J108 |
N-Channel silicon junction field-effect transistor |
InterFET Corporation |
889 |
J109 |
N-Channel silicon junction field-effect transistor |
InterFET Corporation |
890 |
J110 |
N-Channel Silicon Junction Field-Effect Transistor |
InterFET Corporation |
891 |
J110A |
N-Channel Silicon Junction Field-Effect Transistor |
InterFET Corporation |
892 |
J111 |
N-Channel silicon junction field-effect transistor |
InterFET Corporation |
893 |
J111 |
N-channel silicon field-effect transistors |
Philips |
894 |
J112 |
N-Channel silicon junction field-effect transistor |
InterFET Corporation |
895 |
J112 |
N-channel silicon field-effect transistors |
Philips |
896 |
J113 |
N-Channel silicon junction field-effect transistor |
InterFET Corporation |
897 |
J113 |
N-channel silicon field-effect transistors |
Philips |
898 |
J174 |
P-Channel silicon junction field-effect transistor |
InterFET Corporation |
899 |
J174 |
P-channel silicon field-effect transistors |
Philips |
900 |
J175 |
P-Channel silicon junction field-effect transistor |
InterFET Corporation |
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