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Datasheets for 70N

Datasheets found :: 3138
Page: | 25 | 26 | 27 | 28 | 29 | 30 | 31 | 32 | 33 |
No. Part Name Description Manufacturer
841 IS62LV256-70UI 70ns; 3.3V; 32K x 8 low voltage static RAM ICSI
842 IS62LV2568L-70B 70ns; 2.7-3.6V; 256K x 8 low-power and low Vcc CMOS static RAM ICSI
843 IS62LV2568L-70BI 70ns; 2.7-3.6V; 256K x 8 low-power and low Vcc CMOS static RAM ICSI
844 IS62LV2568L-70H 70ns; 2.7-3.6V; 256K x 8 low-power and low Vcc CMOS static RAM ICSI
845 IS62LV2568L-70HI 70ns; 2.7-3.6V; 256K x 8 low-power and low Vcc CMOS static RAM ICSI
846 IS62LV2568L-70T 70ns; 2.7-3.6V; 256K x 8 low-power and low Vcc CMOS static RAM ICSI
847 IS62LV2568L-70TI 70ns; 2.7-3.6V; 256K x 8 low-power and low Vcc CMOS static RAM ICSI
848 IST970N 6V, 50mA ISO-logic buffer schmitt trigger interrupter switch ISOCOM
849 IXFB70N60Q2 Discrete MOSFETs: HiPerFET Power MOSFETS IXYS
850 IXFH70N15 Discrete MOSFETs: HiPerFET Power MOSFETS IXYS
851 IXFK170N10 Discrete MOSFETs: HiPerFET Power MOSFETS IXYS
852 IXFK170N10 HiPerFET Power MOSFET IXYS Corporation
853 IXFN170N10 Discrete MOSFETs: HiPerFET Power MOSFETS IXYS
854 IXFN170N10 HiPerFET Power MOSFET IXYS Corporation
855 IXFN70N60Q2 Discrete MOSFETs: HiPerFET Power MOSFETS IXYS
856 IXFR70N15 Discrete MOSFETs: HiPerFET Power MOSFETS IXYS
857 IXFT70N15 Discrete MOSFETs: HiPerFET Power MOSFETS IXYS
858 IXTQ170N10P Discrete MOSFETs: Standard N-channel Types IXYS
859 IXTT170N10P Discrete MOSFETs: Standard N-channel Types IXYS
860 K6F8016V3A-RF70 70ns; V(cc): -0.2 to +4.0V; 1W; 512K x 16 bit super low power and low voltage full CMOS static RAM Samsung Electronic
861 K6F8016V3A-TF70 70ns; V(cc): -0.2 to +4.0V; 1W; 512K x 16 bit super low power and low voltage full CMOS static RAM Samsung Electronic
862 K6T1008C2C-B 55/70ns; V(cc): 4.5 to 5.5V; 128 x 8-bit low power CMOS static RAM Samsung Electronic
863 K6T1008C2C-DB70 70ns; 128 x 8-bit low power CMOS static RAM Samsung Electronic
864 K6T1008C2C-DL70 70ns; 128 x 8-bit low power CMOS static RAM Samsung Electronic
865 K6T1008C2C-F 70ns; V(cc): 4.5 to 5.5V; 128 x 8-bit low power CMOS static RAM Samsung Electronic
866 K6T1008C2C-GB70 70ns; 128 x 8-bit low power CMOS static RAM Samsung Electronic
867 K6T1008C2C-GL70 70ns; 128 x 8-bit low power CMOS static RAM Samsung Electronic
868 K6T1008C2C-L 55/70ns; V(cc): 4.5 to 5.5V; 128 x 8-bit low power CMOS static RAM Samsung Electronic
869 K6T1008C2C-P 70ns; V(cc): 4.5 to 5.5V; 128 x 8-bit low power CMOS static RAM Samsung Electronic
870 K6T1008C2C-RB70 70ns; 128 x 8-bit low power CMOS static RAM Samsung Electronic


Datasheets found :: 3138
Page: | 25 | 26 | 27 | 28 | 29 | 30 | 31 | 32 | 33 |



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