No. |
Part Name |
Description |
Manufacturer |
841 |
IS62LV256-70UI |
70ns; 3.3V; 32K x 8 low voltage static RAM |
ICSI |
842 |
IS62LV2568L-70B |
70ns; 2.7-3.6V; 256K x 8 low-power and low Vcc CMOS static RAM |
ICSI |
843 |
IS62LV2568L-70BI |
70ns; 2.7-3.6V; 256K x 8 low-power and low Vcc CMOS static RAM |
ICSI |
844 |
IS62LV2568L-70H |
70ns; 2.7-3.6V; 256K x 8 low-power and low Vcc CMOS static RAM |
ICSI |
845 |
IS62LV2568L-70HI |
70ns; 2.7-3.6V; 256K x 8 low-power and low Vcc CMOS static RAM |
ICSI |
846 |
IS62LV2568L-70T |
70ns; 2.7-3.6V; 256K x 8 low-power and low Vcc CMOS static RAM |
ICSI |
847 |
IS62LV2568L-70TI |
70ns; 2.7-3.6V; 256K x 8 low-power and low Vcc CMOS static RAM |
ICSI |
848 |
IST970N |
6V, 50mA ISO-logic buffer schmitt trigger interrupter switch |
ISOCOM |
849 |
IXFB70N60Q2 |
Discrete MOSFETs: HiPerFET Power MOSFETS |
IXYS |
850 |
IXFH70N15 |
Discrete MOSFETs: HiPerFET Power MOSFETS |
IXYS |
851 |
IXFK170N10 |
Discrete MOSFETs: HiPerFET Power MOSFETS |
IXYS |
852 |
IXFK170N10 |
HiPerFET Power MOSFET |
IXYS Corporation |
853 |
IXFN170N10 |
Discrete MOSFETs: HiPerFET Power MOSFETS |
IXYS |
854 |
IXFN170N10 |
HiPerFET Power MOSFET |
IXYS Corporation |
855 |
IXFN70N60Q2 |
Discrete MOSFETs: HiPerFET Power MOSFETS |
IXYS |
856 |
IXFR70N15 |
Discrete MOSFETs: HiPerFET Power MOSFETS |
IXYS |
857 |
IXFT70N15 |
Discrete MOSFETs: HiPerFET Power MOSFETS |
IXYS |
858 |
IXTQ170N10P |
Discrete MOSFETs: Standard N-channel Types |
IXYS |
859 |
IXTT170N10P |
Discrete MOSFETs: Standard N-channel Types |
IXYS |
860 |
K6F8016V3A-RF70 |
70ns; V(cc): -0.2 to +4.0V; 1W; 512K x 16 bit super low power and low voltage full CMOS static RAM |
Samsung Electronic |
861 |
K6F8016V3A-TF70 |
70ns; V(cc): -0.2 to +4.0V; 1W; 512K x 16 bit super low power and low voltage full CMOS static RAM |
Samsung Electronic |
862 |
K6T1008C2C-B |
55/70ns; V(cc): 4.5 to 5.5V; 128 x 8-bit low power CMOS static RAM |
Samsung Electronic |
863 |
K6T1008C2C-DB70 |
70ns; 128 x 8-bit low power CMOS static RAM |
Samsung Electronic |
864 |
K6T1008C2C-DL70 |
70ns; 128 x 8-bit low power CMOS static RAM |
Samsung Electronic |
865 |
K6T1008C2C-F |
70ns; V(cc): 4.5 to 5.5V; 128 x 8-bit low power CMOS static RAM |
Samsung Electronic |
866 |
K6T1008C2C-GB70 |
70ns; 128 x 8-bit low power CMOS static RAM |
Samsung Electronic |
867 |
K6T1008C2C-GL70 |
70ns; 128 x 8-bit low power CMOS static RAM |
Samsung Electronic |
868 |
K6T1008C2C-L |
55/70ns; V(cc): 4.5 to 5.5V; 128 x 8-bit low power CMOS static RAM |
Samsung Electronic |
869 |
K6T1008C2C-P |
70ns; V(cc): 4.5 to 5.5V; 128 x 8-bit low power CMOS static RAM |
Samsung Electronic |
870 |
K6T1008C2C-RB70 |
70ns; 128 x 8-bit low power CMOS static RAM |
Samsung Electronic |
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