No. |
Part Name |
Description |
Manufacturer |
871 |
K6T1008C2C-TB70 |
70ns; 128 x 8-bit low power CMOS static RAM |
Samsung Electronic |
872 |
KM416C1000BJ-7 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 70ns |
Samsung Electronic |
873 |
KM416C1000BJL-7 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 70ns |
Samsung Electronic |
874 |
KM416C1000BT-7 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 70ns |
Samsung Electronic |
875 |
KM416C1000BTL-7 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 70ns |
Samsung Electronic |
876 |
KM416C1004BJ-7 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 70ns |
Samsung Electronic |
877 |
KM416C1004BJ-L7 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 70ns |
Samsung Electronic |
878 |
KM416C1004BT-7 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 70ns |
Samsung Electronic |
879 |
KM416C1004BT-L7 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 70ns |
Samsung Electronic |
880 |
KM416C1200BJ-7 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 70ns |
Samsung Electronic |
881 |
KM416C1200BJL-7 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 70ns |
Samsung Electronic |
882 |
KM416C1200BT-7 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 70ns |
Samsung Electronic |
883 |
KM416C1200BTL-7 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 70ns |
Samsung Electronic |
884 |
KM416C1204BJ-7 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 70ns |
Samsung Electronic |
885 |
KM416C1204BJ-L7 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 70ns |
Samsung Electronic |
886 |
KM416C1204BT-7 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 70ns |
Samsung Electronic |
887 |
KM416C1204BT-L7 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 70ns |
Samsung Electronic |
888 |
KM416C254DJ-7 |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 70ns, 8ms refresh period |
Samsung Electronic |
889 |
KM416C254DJL-7 |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 70ns, self-refresh |
Samsung Electronic |
890 |
KM416C254DT-7 |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 70ns, 8ms refresh period |
Samsung Electronic |
891 |
KM416C254DTL-7 |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 70ns, self-refresh |
Samsung Electronic |
892 |
KM416C256DJ-7 |
256K x 16Bit CMOS dynamic RAM with fast page mode, 70ns, 5V |
Samsung Electronic |
893 |
KM416C256DLJ-7 |
256K x 16Bit CMOS dynamic RAM with fast page mode, 70ns, 5V, self-refresh capability |
Samsung Electronic |
894 |
KM416C256DLT-7 |
256K x 16Bit CMOS dynamic RAM with fast page mode, 70ns, 5V, self-refresh capability |
Samsung Electronic |
895 |
KM416C256DT-7 |
256K x 16Bit CMOS dynamic RAM with fast page mode, 70ns, 5V |
Samsung Electronic |
896 |
KM416V1000BJ-7 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 70ns |
Samsung Electronic |
897 |
KM416V1000BJL-7 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 70ns |
Samsung Electronic |
898 |
KM416V1000BT-7 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 70ns |
Samsung Electronic |
899 |
KM416V1000BTL-7 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 70ns |
Samsung Electronic |
900 |
KM416V1004AJ-7 |
3.3V, 1M x 16 bit CMOS DRAM with extended data out, 70ns |
Samsung Electronic |
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