| No. |
Part Name |
Description |
Manufacturer |
| 991 |
KM684000LTI-7 |
512Kx8 bit CMOS static RAM, 70ns |
Samsung Electronic |
| 992 |
KM684000LTI-7L |
512Kx8 bit CMOS static RAM, 70ns, low power |
Samsung Electronic |
| 993 |
KM684000R-7 |
512Kx8 bit CMOS static RAM, 70ns |
Samsung Electronic |
| 994 |
KM684000T-7 |
512Kx8 bit CMOS static RAM, 70ns |
Samsung Electronic |
| 995 |
KM68512ALG-7 |
64K x 8 bit CMOS static RAM, 70ns, low power |
Samsung Electronic |
| 996 |
KM68512ALG-7L |
64K x 8 bit CMOS static RAM, 70ns, low low power |
Samsung Electronic |
| 997 |
KM68512ALGI-7 |
64K x 8 bit CMOS static RAM, 70ns, low power |
Samsung Electronic |
| 998 |
KM68512ALGI-7L |
64K x 8 bit CMOS static RAM, 70ns, low low power |
Samsung Electronic |
| 999 |
KM68512ALTI-7L |
64K x 8 bit CMOS static RAM, 70ns, low low power |
Samsung Electronic |
| 1000 |
KM68512BLT-7L |
64K x 8 bit CMOS static RAM, 70ns, low low power |
Samsung Electronic |
| 1001 |
KM68512BLTI-7L |
64K x 8 bit CMOS static RAM, 70ns, low low power |
Samsung Electronic |
| 1002 |
KT3170N |
LOW POWER DTMF RECEIVER |
Samsung Electronic |
| 1003 |
KT870N11 |
Slotted optical switch phototransistor output. Opaque polysulpone discrete shells with .02inches SQ, leads. Electrical parameter A lead spacing .320 inches. Aperture in front of sensor .010 inches. Aperture in front of emitter .010 inches. |
Optek Technology |
| 1004 |
KT870N15 |
Slotted optical switch phototransistor output. Opaque polysulpone discrete shells with .02inches SQ, leads. Electrical parameter A lead spacing .320 inches. Aperture in front of sensor .010 inches. Aperture in front of emitter .050 inches. |
Optek Technology |
| 1005 |
KT870N51 |
Slotted optical switch phototransistor output. Opaque polysulpone discrete shells with .02inches SQ, leads. Electrical parameter A lead spacing .320 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .010 inches. |
Optek Technology |
| 1006 |
KT870N55 |
Slotted optical switch phototransistor output. Opaque polysulpone discrete shells with .02inches SQ, leads. Electrical parameter A lead spacing .320 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .050 inches. |
Optek Technology |
| 1007 |
KV1370NT |
VARIABLE CAPACITANCE DIODE |
TOKO |
| 1008 |
LA3870NM |
LA3870NM |
SANYO |
| 1009 |
LA3870NM |
LA3870NM |
SANYO |
| 1010 |
LC35256FM-70U |
70ns; V(cc): 7.0V; V(in): -0.3 to +0.3V; 256K (32768 words x 8 bits) SRAM control pins: OE and CE |
SANYO |
| 1011 |
LC3664BL-70 |
Access time: 70ns; V(cc)max: +7V; 1W; 64K (8192 words x 8-bit) SRAM |
SANYO |
| 1012 |
LC7070N |
Sync and Error Detection & Correction ICs for RDS |
SANYO |
| 1013 |
LC7070NM |
Sync and Error Detection & Correction ICs for RDS |
SANYO |
| 1014 |
LM1870N |
15 V, 1.9 W, stereo demodulator with blend |
National Semiconductor |
| 1015 |
LP62E16128AU-70LLT |
70ns; operating current:25mA; standby current:10uA; 128 x 16bit low voltage CMOS SRAM |
AMIC Technology |
| 1016 |
LP62E16128AV-70LLT |
70ns; operating current:25mA; standby current:10uA; 128 x 16bit low voltage CMOS SRAM |
AMIC Technology |
| 1017 |
LP62E16256CU-70LLT |
70ns; operating current:30mA; standby current:10uA; 256 x 16bit low voltage CMOS SRAM |
AMIC Technology |
| 1018 |
LP62E16256CV-70LLT |
70ns; operating current:30mA; standby current:10uA; 256 x 16bit low voltage CMOS SRAM |
AMIC Technology |
| 1019 |
LP62S1024BM-70LLI |
70ns; operating current:30mA; standby current:5uA; 128K x 8bit low voltage CMOS SRAM |
AMIC Technology |
| 1020 |
LP62S1024BU-70LLI |
70ns; operating current:30mA; standby current:5uA; 128K x 8bit low voltage CMOS SRAM |
AMIC Technology |
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