No. |
Part Name |
Description |
Manufacturer |
841 |
2N5630 |
Silicon N-P-N epitaxial-base high-power transistor. 120V, 200W. |
General Electric Solid State |
842 |
2N5631 |
Silicon N-P-N epitaxial-base high-power transistor. 140V, 200W. |
General Electric Solid State |
843 |
2N5671 |
High-current, high-power, high-speed silicon N-P-N planar transistor. |
General Electric Solid State |
844 |
2N5672 |
High-current, high-power, high-speed silicon N-P-N planar transistor. |
General Electric Solid State |
845 |
2N5754 |
2.5-A silicon triac. Voltage(typ) 100 V. |
General Electric Solid State |
846 |
2N5755 |
2.5-A silicon triac. Voltage(typ) 200 V. |
General Electric Solid State |
847 |
2N5756 |
2.5-A silicon triac. Voltage(typ) 400 V. |
General Electric Solid State |
848 |
2N5757 |
2.5-A silicon triac. Voltage(typ) 600 V. |
General Electric Solid State |
849 |
2N5781 |
Silicon P-N-P epitaxial-base transistor. -80V, 10W. |
General Electric Solid State |
850 |
2N5782 |
Silicon P-N-P epitaxial-base transistor. -65V, 10W. |
General Electric Solid State |
851 |
2N5783 |
Silicon P-N-P epitaxial-base transistor. -45V, 10W. |
General Electric Solid State |
852 |
2N5784 |
Silicon N-P-N epitaxial-base transistor. 80V, 10W. |
General Electric Solid State |
853 |
2N5785 |
Silicon N-P-N epitaxial-base transistor. 65V, 10W. |
General Electric Solid State |
854 |
2N5786 |
Silicon N-P-N epitaxial-base transistor. 45V, 10W. |
General Electric Solid State |
855 |
2N5838 |
High-voltage, high-power silicon N-P-N power transistor. |
General Electric Solid State |
856 |
2N5839 |
High-voltage, high-power silicon N-P-N power transistor. |
General Electric Solid State |
857 |
2N5840 |
High-voltage, high-power silicon N-P-N power transistor. |
General Electric Solid State |
858 |
2N5885 |
High-current, high-power, high-speed power transistor. 60V, 200W. |
General Electric Solid State |
859 |
2N5886 |
High-current, high-power, high-speed power transistor. 80V, 200W. |
General Electric Solid State |
860 |
2N5954 |
Silicon P-N-P medium-power transistor. -90V, 40W. |
General Electric Solid State |
861 |
2N5955 |
Silicon P-N-P medium-power transistor. -70V, 40W. |
General Electric Solid State |
862 |
2N5956 |
Silicon P-N-P medium-power transistor. -50V, 40W. |
General Electric Solid State |
863 |
2N6027 |
Programmable unijunction transistor. |
General Electric Solid State |
864 |
2N6028 |
Programmable unijunction transistor. |
General Electric Solid State |
865 |
2N6032 |
High-current, high-power, high-speed silicon N-P-N transistor. |
General Electric Solid State |
866 |
2N6033 |
High-current, high-power, high-speed silicon N-P-N transistor. |
General Electric Solid State |
867 |
2N6043 |
8A N-P-N darlington power transistor. |
General Electric Solid State |
868 |
2N6044 |
8A N-P-N darlington power transistor. |
General Electric Solid State |
869 |
2N6045 |
8A N-P-N darlington power transistor. |
General Electric Solid State |
870 |
2N6050 |
12A P-N-P monolithic darlington power transistor. |
General Electric Solid State |
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