No. |
Part Name |
Description |
Manufacturer |
871 |
2N6051 |
12A P-N-P monolithic darlington power transistor. |
General Electric Solid State |
872 |
2N6052 |
12A P-N-P monolithic darlington power transistor. |
General Electric Solid State |
873 |
2N6055 |
8 A silicon N-P-N darlington power transistor. |
General Electric Solid State |
874 |
2N6056 |
8 A silicon N-P-N darlington power transistor. |
General Electric Solid State |
875 |
2N6057 |
12A N-P-N monolithic darlington power transistor. |
General Electric Solid State |
876 |
2N6058 |
12A N-P-N monolithic darlington power transistor. |
General Electric Solid State |
877 |
2N6059 |
12A N-P-N monolithic darlington power transistor. |
General Electric Solid State |
878 |
2N6076 |
PNP silicon transistor. 25V, 100mA. |
General Electric Solid State |
879 |
2N6077 |
High-voltage, high-power silicon N-P-N transistor. |
General Electric Solid State |
880 |
2N6078 |
High-voltage, high-power silicon N-P-N transistor. |
General Electric Solid State |
881 |
2N6079 |
High-voltage, high-power silicon N-P-N transistor. |
General Electric Solid State |
882 |
2N6106 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -80V. |
General Electric Solid State |
883 |
2N6107 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -80V. |
General Electric Solid State |
884 |
2N6108 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -60V. |
General Electric Solid State |
885 |
2N6109 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -60V. |
General Electric Solid State |
886 |
2N6110 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -40V. |
General Electric Solid State |
887 |
2N6111 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -40V. |
General Electric Solid State |
888 |
2N6121 |
Epitaxial-base, silicon N-P-N VERSAWATT transistor. 45V. |
General Electric Solid State |
889 |
2N6122 |
Epitaxial-base, silicon N-P-N VERSAWATT transistor. 60V. |
General Electric Solid State |
890 |
2N6123 |
Epitaxial-base, silicon N-P-N VERSAWATT transistor. 80V. |
General Electric Solid State |
891 |
2N6124 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -45V. |
General Electric Solid State |
892 |
2N6125 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -60V. |
General Electric Solid State |
893 |
2N6126 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -80V. |
General Electric Solid State |
894 |
2N6211 |
High-voltage, medium-power silicon P-N-P transistor. |
General Electric Solid State |
895 |
2N6212 |
High-voltage, medium-power silicon P-N-P transistor. |
General Electric Solid State |
896 |
2N6213 |
High-voltage, medium-power silicon P-N-P transistor. |
General Electric Solid State |
897 |
2N6214 |
High-voltage, medium-power silicon P-N-P transistor. |
General Electric Solid State |
898 |
2N6246 |
Epitaxial-base, silicon P-N-P high-power transistor. -70V, 125W. |
General Electric Solid State |
899 |
2N6247 |
Epitaxial-base, silicon P-N-P high-power transistor. -90V, 125W. |
General Electric Solid State |
900 |
2N6248 |
Epitaxial-base, silicon P-N-P high-power transistor. -110V, 125W. |
General Electric Solid State |
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