| No. |
Part Name |
Description |
Manufacturer |
| 841 |
2N5550S |
High Voltage Transistor |
Korea Electronics (KEC) |
| 842 |
2N5551 |
NPN Silicon Transistor (General purpose amplifier High voltage application) |
AUK Corp |
| 843 |
2N5551 |
NPN EPITAXIAL PLANAR SILICON HIGH VOLTAGE TRANSISTOR |
Boca Semiconductor Corporation |
| 844 |
2N5551 |
High Voltage Transistor |
Korea Electronics (KEC) |
| 845 |
2N5551 |
SILICON GENERAL PURPOSE HIGH VOLTAGE TRANSISTORS |
Micro Electronics |
| 846 |
2N5551 |
NPN Silicon Expitaxial Planar Transistor for general purpose/ high voltage amplifier applications |
Semtech |
| 847 |
2N5551C |
High Voltage Transistor |
Korea Electronics (KEC) |
| 848 |
2N5551S |
High Voltage Transistor |
Korea Electronics (KEC) |
| 849 |
2N5551SC |
High Voltage Transistor |
Korea Electronics (KEC) |
| 850 |
2N5630 |
Collector-emitter/base voltage: 120Vdc; 16Amp; high-voltage, high-power transistor. For high power audio amplifier applications and high voltage switching regulator circuits |
Motorola |
| 851 |
2N5631 |
Collector-emitter/base voltage: 140Vdc; 16Amp; high-voltage, high-power transistor. For high power audio amplifier applications and high voltage switching regulator circuits |
Motorola |
| 852 |
2N5679 |
PNP/NPN HIGH VOLTAGE SILICON TRANSISTORS |
Boca Semiconductor Corporation |
| 853 |
2N5679 |
10.000W High Voltage PNP Metal Can Transistor. 100V Vceo, 1.000A Ic, 5 hFE. |
Continental Device India Limited |
| 854 |
2N5680 |
PNP/NPN HIGH VOLTAGE SILICON TRANSISTORS |
Boca Semiconductor Corporation |
| 855 |
2N5680 |
10.000W High Voltage PNP Metal Can Transistor. 120V Vceo, 1.000A Ic, 5 hFE. |
Continental Device India Limited |
| 856 |
2N5681 |
PNP/NPN HIGH VOLTAGE SILICON TRANSISTORS |
Boca Semiconductor Corporation |
| 857 |
2N5681 |
10.000W High Voltage NPN Metal Can Transistor. 100V Vceo, 1.000A Ic, 5 hFE. |
Continental Device India Limited |
| 858 |
2N5682 |
PNP/NPN HIGH VOLTAGE SILICON TRANSISTORS |
Boca Semiconductor Corporation |
| 859 |
2N5682 |
10.000W High Voltage NPN Metal Can Transistor. 120V Vceo, 1.000A Ic, 5 hFE. |
Continental Device India Limited |
| 860 |
2N5831 |
NPN small signal high voltage general purpose amplifier. |
Fairchild Semiconductor |
| 861 |
2N5833 |
NPN small signal high voltage general purpose amplifier. |
Fairchild Semiconductor |
| 862 |
2N6030 |
Collector-emitter/base voltage: 120Vdc; 16Amp; high-voltage, high-power transistor. For high power audio amplifier applications and high voltage switching regulator circuits |
Motorola |
| 863 |
2N6031 |
Collector-emitter/base voltage: 140Vdc; 16Amp; high-voltage, high-power transistor. For high power audio amplifier applications and high voltage switching regulator circuits |
Motorola |
| 864 |
2N6211 |
MEDIUM-POWER HIGH VOLTAGE PNP POWER TRANSISTORS |
Boca Semiconductor Corporation |
| 865 |
2N6212 |
MEDIUM-POWER HIGH VOLTAGE PNP POWER TRANSISTORS |
Boca Semiconductor Corporation |
| 866 |
2N6213 |
MEDIUM-POWER HIGH VOLTAGE PNP POWER TRANSISTORS |
Boca Semiconductor Corporation |
| 867 |
2N6262 |
High voltage silicon N-P-N transistor. 170V, 150W. |
General Electric Solid State |
| 868 |
2N6282 |
20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 60 V(min). 160 W. |
General Electric Solid State |
| 869 |
2N6283 |
20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 80 V(min). 160 W. |
General Electric Solid State |
| 870 |
2N6284 |
20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 100 V(min). 160 W. |
General Electric Solid State |
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