No. |
Part Name |
Description |
Manufacturer |
871 |
2N6285 |
20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 60 V(min). 160 W. |
General Electric Solid State |
872 |
2N6286 |
20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 80 V(min). 160 W. |
General Electric Solid State |
873 |
2N6287 |
20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 100 V(min). 160 W. |
General Electric Solid State |
874 |
2N6420 |
COMPLEMENTARY MEDIUM-POWER HIGH VOLTAGE POWER TRANSISTORS |
Boca Semiconductor Corporation |
875 |
2N6420 |
Complementary Medium-Power High Voltage Power Transistor 35W 1A |
Motorola |
876 |
2N6421 |
COMPLEMENTARY MEDIUM-POWER HIGH VOLTAGE POWER TRANSISTORS |
Boca Semiconductor Corporation |
877 |
2N6421 |
Complementary Medium-Power High Voltage Power Transistor 35W 2A |
Motorola |
878 |
2N6422 |
COMPLEMENTARY MEDIUM-POWER HIGH VOLTAGE POWER TRANSISTORS |
Boca Semiconductor Corporation |
879 |
2N6422 |
Complementary Medium-Power High Voltage Power Transistor 35W 2A |
Motorola |
880 |
2N6423 |
COMPLEMENTARY MEDIUM-POWER HIGH VOLTAGE POWER TRANSISTORS |
Boca Semiconductor Corporation |
881 |
2N6423 |
Complementary Medium-Power High Voltage Power Transistor 35W 2A |
Motorola |
882 |
2N6497 |
HIGH VOLTAGE NPN SILICON POWER TRANSISTORS |
Boca Semiconductor Corporation |
883 |
2N6497 |
5A high voltage NPN silicon 80W power transistor |
Motorola |
884 |
2N6497-D |
High Voltage NPN Silicon Power Transistors |
ON Semiconductor |
885 |
2N6498 |
HIGH VOLTAGE NPN SILICON POWER TRANSISTORS |
Boca Semiconductor Corporation |
886 |
2N6498 |
5A high voltage NPN silicon 80W power transistor |
Motorola |
887 |
2N6499 |
HIGH VOLTAGE NPN SILICON POWER TRANSISTORS |
Boca Semiconductor Corporation |
888 |
2N6499 |
5A high voltage NPN silicon 80W power transistor |
Motorola |
889 |
2N6515 |
NPN Epitaxial Silicon Transistor - High Voltage Transistor |
Fairchild Semiconductor |
890 |
2N6515 |
High Voltage Transistor 625mW |
Micro Commercial Components |
891 |
2N6515 |
High Voltage Transistors |
ON Semiconductor |
892 |
2N6515 |
High voltage transistor. Collector-emitter voltage: Vceo = 250V. Collector-base voltage: Vcbo = 250V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
893 |
2N6515-D |
High Voltage Transistors |
ON Semiconductor |
894 |
2N6515RLRM |
High Voltage Transistors |
ON Semiconductor |
895 |
2N6516 |
NPN Epitaxial Silicon Transistor - High Voltage Transistor |
Fairchild Semiconductor |
896 |
2N6516 |
High voltage transistor. Collector-emitter voltage: Vceo = 250V. Collector-base voltage: Vcbo = 250V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
897 |
2N6517 |
NPN Epitaxial Silicon Transistor - High Voltage Transistor |
Fairchild Semiconductor |
898 |
2N6517 |
High Voltage Transistor 625mW |
Micro Commercial Components |
899 |
2N6517 |
High Voltage Transistors |
ON Semiconductor |
900 |
2N6517 |
High voltage transistor. Collector-emitter voltage: Vceo = 350V. Collector-base voltage: Vcbo = 350V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
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