| No. |
Part Name |
Description |
Manufacturer |
| 841 |
CLF1G0060-30 |
Broadband RF power GaN HEMT |
NXP Semiconductors |
| 842 |
CLF1G0060S-10 |
Broadband RF power GaN HEMT |
NXP Semiconductors |
| 843 |
CLF1G0060S-30 |
Broadband RF power GaN HEMT |
NXP Semiconductors |
| 844 |
CM20-12A |
NPN SILICON RF POWER TRANSISTOR |
Advanced Semiconductor |
| 845 |
CM45-28 |
NPN SILICON RF POWER TRANSISTOR |
Advanced Semiconductor |
| 846 |
CRF-22010-001 |
62.5mW; 120VDC; SiC RF power MESFET. For class A,AB amplifiers; TDMA, EDGE, CDMA, W-CDMA, broadband amplifiers, CATV amplifiers, MMDS |
CREE POWER |
| 847 |
CRF-22010-101 |
62.5mW; 120VDC; SiC RF power MESFET. For class A,AB amplifiers; TDMA, EDGE, CDMA, W-CDMA, broadband amplifiers, CATV amplifiers, MMDS |
CREE POWER |
| 848 |
CSA1532 |
0.150W RF PNP Transistor. 20V Vceo, 30.000A Ic, 70 - 220 hFE. Complementary CSC3930 |
Continental Device India Limited |
| 849 |
CSA1532B |
0.150W RF PNP Transistor. 20V Vceo, 30.000A Ic, 70 - 140 hFE. Complementary CSC3930B |
Continental Device India Limited |
| 850 |
CSA1532C |
0.150W RF PNP Transistor. 20V Vceo, 30.000A Ic, 110 - 220 hFE. Complementary CSC3930C |
Continental Device India Limited |
| 851 |
D1-28Z |
NPN SILICON RF POWER TRANSISTOR |
Advanced Semiconductor |
| 852 |
D10-28 |
NPN SILICON RF POWER TRANSISTOR |
Advanced Semiconductor |
| 853 |
DB900100W |
RF POWER AMPLIFIER USING 2 X PD57060S THE LDMOST FAMILY |
SGS Thomson Microelectronics |
| 854 |
DB90080W |
RF POWER AMPLIFIER USING 2 X PD57045S THE LDMOST FAMILY |
SGS Thomson Microelectronics |
| 855 |
DB96070W |
RF POWER AMPLIFIER USING 2 X PD57045S THE LDMOST FAMILY |
SGS Thomson Microelectronics |
| 856 |
DB96090W |
RF POWER AMPLIFIER USING 2 X PD57060S THE LDMOST FAMILY |
SGS Thomson Microelectronics |
| 857 |
DE150-101N09A |
RF Power MOSFET |
Directed Energy |
| 858 |
DE150-101N09A |
RF power MOSFET |
IXYS |
| 859 |
DE150-102N02A |
RF Power MOSFET |
Directed Energy |
| 860 |
DE150-102N02A |
RF power MOSFET |
IXYS |
| 861 |
DE150-201N09A |
RF Power MOSFET |
Directed Energy |
| 862 |
DE150-201N09A |
RF power MOSFET |
IXYS |
| 863 |
DE150-501N04A |
RF Power MOSFET |
Directed Energy |
| 864 |
DE150-501N04A |
RF power MOSFET |
IXYS |
| 865 |
DE275-102N06A |
RF Power MOSFET |
Directed Energy |
| 866 |
DE275-102N06A |
RF power MOSFET |
IXYS |
| 867 |
DE275-501N16 |
RF Power MOSFET |
IXYS Corporation |
| 868 |
DE275-501N16A |
RF Power MOSFET |
Directed Energy |
| 869 |
DE275-501N16A |
RF power MOSFET |
IXYS |
| 870 |
DE275X2-102N06A |
RF Power MOSFET |
Directed Energy |
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