| No. |
Part Name |
Description |
Manufacturer |
| 871 |
DE275X2-102N06A |
RF power MOSFET |
IXYS |
| 872 |
DE275X2-501N16 |
RF Power MOSFET |
IXYS Corporation |
| 873 |
DE275X2-501N16A |
RF Power MOSFET |
Directed Energy |
| 874 |
DE275X2-501N16A |
RF power MOSFET |
IXYS |
| 875 |
DE375-102N10A |
RF Power MOSFET |
Directed Energy |
| 876 |
DE375-102N10A |
RF power MOSFET |
IXYS |
| 877 |
DE375-102N12A |
RF Power MOSFET |
Directed Energy |
| 878 |
DE375-102N12A |
RF power MOSFET |
IXYS |
| 879 |
DE375-501N21A |
RF Power MOSFET |
Directed Energy |
| 880 |
DE375-501N21A |
RF power MOSFET |
IXYS |
| 881 |
DE475-102N20A |
RF Power MOSFET |
Directed Energy |
| 882 |
DE475-102N20A |
RF power MOSFET |
IXYS |
| 883 |
DE475-102N21A |
RF Power MOSFET |
Directed Energy |
| 884 |
DE475-102N21A |
RF power MOSFET |
IXYS |
| 885 |
DE475-501N44A |
RF Power MOSFET |
Directed Energy |
| 886 |
DE475-501N44A |
RF power MOSFET |
IXYS |
| 887 |
DME150 |
RF Power Transistors: AVIONICS |
Advanced Power Technology |
| 888 |
DME375A |
RF Power Transistors: AVIONICS |
Advanced Power Technology |
| 889 |
DME500 |
RF Power Transistors: AVIONICS |
Advanced Power Technology |
| 890 |
DME800 |
RF Power Transistors: AVIONICS |
Advanced Power Technology |
| 891 |
DS1870 |
LDMOS RF Power-Amplifier Bias Controller |
MAXIM - Dallas Semiconductor |
| 892 |
DS1870E-010 |
5 V, LDMOS RF power-amplifier bias controller |
MAXIM - Dallas Semiconductor |
| 893 |
DS1870E-010+ |
LDMOS RF Power-Amplifier Bias Controller |
MAXIM - Dallas Semiconductor |
| 894 |
DS1870E-010+T&R |
LDMOS RF Power-Amplifier Bias Controller |
MAXIM - Dallas Semiconductor |
| 895 |
EB107 |
Application Note - Mounting considerations for Motorola RF power modules |
Motorola |
| 896 |
ESMD-169 |
1-3500 MHz, surface mount mixer, RF power 50mW |
MA-Com |
| 897 |
ESMD-169TR |
1-3500 MHz, surface mount mixer, RF power 50mW |
MA-Com |
| 898 |
F1001 |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
Polyfet RF Devices |
| 899 |
F1001C |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
Polyfet RF Devices |
| 900 |
F1002 |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
Polyfet RF Devices |
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