DatasheetCatalog
  |   Home   |   All manufacturers   |   By Category   |  
FR DE ES IT PT RU

   
Quick jump to: 1N 2N 2SA 2SC 74 AD BA BC BD BF BU CXA HCF IRF KA KIA LA LM MC NE ST STK TDA TL UA
LM317 LM339 MAX232 NE555 LM324 8051 7805 2N3055 LM358 2N2222 74LS138 TDA7294 TL431 IRF540 1N4148

Datasheets for SE,

Datasheets found :: 11528
Page: | 25 | 26 | 27 | 28 | 29 | 30 | 31 | 32 | 33 |
No. Part Name Description Manufacturer
841 2N3956 Low Noise, Low Drift, Monolithic Dual, N-Channel JFET Linear Systems
842 2N3958 Low Noise, Low Drift, Monolithic Dual, N-Channel JFET Linear Systems
843 2N3980 Silicon annular PN unijunction transistor designed for military and industrial use in pulse, timing, sensing, and oscillator circuits Motorola
844 2N4347 General purpose NPN transistor - metal case, high power IPRS Baneasa
845 2N4391 Low Noise, N-Channel JFET Switch Linear Systems
846 2N4392 Low Noise, N-Channel JFET Switch Linear Systems
847 2N4393 Low Noise, N-Channel JFET Switch Linear Systems
848 2N5415 PNP switching transistor - metal case, high power IPRS Baneasa
849 2N5416 PNP switching transistor - metal case, high power IPRS Baneasa
850 2N6106 EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS Boca Semiconductor Corporation
851 2N6106 Epitaxial-base, silicon P-N-P VERSAWATT transistor. -80V. General Electric Solid State
852 2N6107 EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS Boca Semiconductor Corporation
853 2N6107 Epitaxial-base, silicon P-N-P VERSAWATT transistor. -80V. General Electric Solid State
854 2N6108 EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS Boca Semiconductor Corporation
855 2N6108 Epitaxial-base, silicon P-N-P VERSAWATT transistor. -60V. General Electric Solid State
856 2N6109 EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS Boca Semiconductor Corporation
857 2N6109 Epitaxial-base, silicon P-N-P VERSAWATT transistor. -60V. General Electric Solid State
858 2N6110 EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS Boca Semiconductor Corporation
859 2N6110 Epitaxial-base, silicon P-N-P VERSAWATT transistor. -40V. General Electric Solid State
860 2N6111 EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS Boca Semiconductor Corporation
861 2N6111 Epitaxial-base, silicon P-N-P VERSAWATT transistor. -40V. General Electric Solid State
862 2N6121 Epitaxial-base, silicon N-P-N VERSAWATT transistor. 45V. General Electric Solid State
863 2N6122 Epitaxial-base, silicon N-P-N VERSAWATT transistor. 60V. General Electric Solid State
864 2N6123 Epitaxial-base, silicon N-P-N VERSAWATT transistor. 80V. General Electric Solid State
865 2N6124 Epitaxial-base, silicon P-N-P VERSAWATT transistor. -45V. General Electric Solid State
866 2N6125 Epitaxial-base, silicon P-N-P VERSAWATT transistor. -60V. General Electric Solid State
867 2N6126 Epitaxial-base, silicon P-N-P VERSAWATT transistor. -80V. General Electric Solid State
868 2N6246 Epitaxial-base, silicon P-N-P high-power transistor. -70V, 125W. General Electric Solid State
869 2N6247 Epitaxial-base, silicon P-N-P high-power transistor. -90V, 125W. General Electric Solid State
870 2N6248 Epitaxial-base, silicon P-N-P high-power transistor. -110V, 125W. General Electric Solid State


Datasheets found :: 11528
Page: | 25 | 26 | 27 | 28 | 29 | 30 | 31 | 32 | 33 |



© 2024 - www Datasheet Catalog com