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Datasheets for SE,

Datasheets found :: 11537
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No. Part Name Description Manufacturer
871 2N6248 Epitaxial-base, silicon P-N-P high-power transistor. -110V, 125W. General Electric Solid State
872 2N6253 General purpose NPN transistor - metal case, high power IPRS Baneasa
873 2N6288 EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS Boca Semiconductor Corporation
874 2N6288 Epitaxial-base, silicon N-P-N VERSAWATT transistor. 40V. General Electric Solid State
875 2N6289 EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS Boca Semiconductor Corporation
876 2N6289 Epitaxial-base, silicon N-P-N VERSAWATT transistor. 40V. General Electric Solid State
877 2N6290 EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS Boca Semiconductor Corporation
878 2N6290 Epitaxial-base, silicon N-P-N VERSAWATT transistor. 60V. General Electric Solid State
879 2N6291 EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS Boca Semiconductor Corporation
880 2N6291 Epitaxial-base, silicon N-P-N VERSAWATT transistor. 60V. General Electric Solid State
881 2N6292 EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS Boca Semiconductor Corporation
882 2N6292 Epitaxial-base, silicon N-P-N VERSAWATT transistor. 80V. General Electric Solid State
883 2N6293 EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS Boca Semiconductor Corporation
884 2N6293 Epitaxial-base, silicon N-P-N VERSAWATT transistor. 80V. General Electric Solid State
885 2N6469 Epitaxial-base, silicon P-N-P high-power transistor. -50V, 125W. General Electric Solid State
886 2N6473 EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS Boca Semiconductor Corporation
887 2N6473 Epitaxial-base, silicon N-P-N VERSAWATT transistor. 110V. General Electric Solid State
888 2N6474 Epitaxial-base, silicon N-P-N VERSAWATT transistor. 130V. General Electric Solid State
889 2N6475 EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS Boca Semiconductor Corporation
890 2N6475 Epitaxial-base, silicon P-N-P VERSAWATT transistor. -110V. General Electric Solid State
891 2N6476 Epitaxial-Base, Silicon N-P-N and P-N-P VERSAWATT Transistors Boca Semiconductor Corporation
892 2N6476 Epitaxial-base, silicon P-N-P VERSAWATT transistor. -130V. General Electric Solid State
893 2N918CSM GENERAL PURPOSE, SMALL SIGNAL NPN TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS SemeLAB
894 2N929 Silicon NPN transistor, low noise, low level amplification SESCOSEM
895 2N930 Silicon NPN transistor, low noise, low level amplification SESCOSEM
896 2SC2107 NPN Silicon Epitaxial Transistor, Industrial Use, General Purpose Amplifier and Switches NEC
897 2SC2954-T1 For amplify high frequency, low noise, and wide band. NEC
898 2SC2954-T2 For amplify high frequency, low noise, and wide band. NEC
899 2SC368 Low Frequency Low-Noise, Low Level Transistor TOSHIBA
900 2SC4405 NPN Epitaxial Planar Silicon Transistor UHF, Low-Noise, Wide-Band Amplifier Applications SANYO


Datasheets found :: 11537
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