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Datasheets for SE,

Datasheets found :: 11537
Page: | 30 | 31 | 32 | 33 | 34 | 35 | 36 | 37 | 38 |
No. Part Name Description Manufacturer
991 78M6612-IM/F Single-Phase, Dual-Outlet Power and Energy Measurement IC MAXIM - Dallas Semiconductor
992 78M6612-IM/F/PD Single-Phase, Dual-Outlet Power and Energy Measurement IC MAXIM - Dallas Semiconductor
993 78M6612-IM/F/PD2 Single-Phase, Dual-Outlet Power and Energy Measurement IC MAXIM - Dallas Semiconductor
994 78M6612-IM/F/PD3 Single-Phase, Dual-Outlet Power and Energy Measurement IC MAXIM - Dallas Semiconductor
995 78M6612-IM/F/PP1 Single-Phase, Dual-Outlet Power and Energy Measurement IC MAXIM - Dallas Semiconductor
996 78M6612-IMR/F Single-Phase, Dual-Outlet Power and Energy Measurement IC MAXIM - Dallas Semiconductor
997 78M6612-IMR/F/PD Single-Phase, Dual-Outlet Power and Energy Measurement IC MAXIM - Dallas Semiconductor
998 78M6612-IMR/F/PD2 Single-Phase, Dual-Outlet Power and Energy Measurement IC MAXIM - Dallas Semiconductor
999 78M6612-IMR/F/PD3 Single-Phase, Dual-Outlet Power and Energy Measurement IC MAXIM - Dallas Semiconductor
1000 78M6612-M/F/P2 Single-Phase, Dual-Outlet Power and Energy Measurement IC MAXIM - Dallas Semiconductor
1001 78M6612-M/F/PE Single-Phase, Dual-Outlet Power and Energy Measurement IC MAXIM - Dallas Semiconductor
1002 78M6612-MR/F/P2 Single-Phase, Dual-Outlet Power and Energy Measurement IC MAXIM - Dallas Semiconductor
1003 78M6612-MR/F/PE Single-Phase, Dual-Outlet Power and Energy Measurement IC MAXIM - Dallas Semiconductor
1004 78M6612-SOCKET64 Single-Phase, Dual-Outlet Power and Energy Measurement IC MAXIM - Dallas Semiconductor
1005 78M6612-SOCKET68 Single-Phase, Dual-Outlet Power and Energy Measurement IC MAXIM - Dallas Semiconductor
1006 79-04 Motorola case, dimensions, similar with TO-205AD Motorola
1007 79-05 Motorola case, dimensions, similar with TO-39 CE Motorola
1008 81416-012 Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz SGS Thomson Microelectronics
1009 81416-20 Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz SGS Thomson Microelectronics
1010 81416-6 Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz SGS Thomson Microelectronics
1011 82223-12 Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz SGS Thomson Microelectronics
1012 82223-18 Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz SGS Thomson Microelectronics
1013 82223-20 Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz SGS Thomson Microelectronics
1014 82223-4 Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz SGS Thomson Microelectronics
1015 82324-20 Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.3-2.4GHz SGS Thomson Microelectronics
1016 82327-15 Common base, silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz SGS Thomson Microelectronics
1017 82327-4 Common base, silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz SGS Thomson Microelectronics
1018 82327-6 Common base, silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz SGS Thomson Microelectronics
1019 827-01 Motorola case, dimensions, similar with MRP-7 Motorola
1020 828-01 Motorola case, dimensions, similar with EA Motorola


Datasheets found :: 11537
Page: | 30 | 31 | 32 | 33 | 34 | 35 | 36 | 37 | 38 |



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