| No. |
Part Name |
Description |
Manufacturer |
| 8581 |
2N3904RLRA |
General Purpose Transistors |
ON Semiconductor |
| 8582 |
2N3904RLRA |
General Purpose Transistors |
ON Semiconductor |
| 8583 |
2N3904RLRE |
General Purpose Transistors |
ON Semiconductor |
| 8584 |
2N3904RLRM |
General Purpose Transistors |
ON Semiconductor |
| 8585 |
2N3904RLRM |
General Purpose Transistors |
ON Semiconductor |
| 8586 |
2N3904RLRP |
General Purpose Transistors |
ON Semiconductor |
| 8587 |
2N3904RLRP |
General Purpose Transistors |
ON Semiconductor |
| 8588 |
2N3904S |
Switching Transistor |
Korea Electronics (KEC) |
| 8589 |
2N3904SC |
Switching Transistor |
Korea Electronics (KEC) |
| 8590 |
2N3904U |
Switching Transistor |
Korea Electronics (KEC) |
| 8591 |
2N3904ZL1 |
General Purpose Transistors |
ON Semiconductor |
| 8592 |
2N3904ZL1 |
General Purpose Transistors |
ON Semiconductor |
| 8593 |
2N3905 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
| 8594 |
2N3905 |
0.625W General Purpose PNP Plastic Leaded Transistor. 40V Vceo, 0.200A Ic, 30 - hFE |
Continental Device India Limited |
| 8595 |
2N3905 |
Si-Epitaxial PlanarTransistors |
Diotec Elektronische |
| 8596 |
2N3905 |
Low Noise PNP Transistor |
FERRANTI |
| 8597 |
2N3905 |
Switching PNP transistor |
FERRANTI |
| 8598 |
2N3905 |
Planar epitaxial PNP silicon transistor. -40V, 200mA. |
General Electric Solid State |
| 8599 |
2N3905 |
PNP Silicon Epitaxial Planar Transistor |
Honey Technology |
| 8600 |
2N3905 |
PNP silicon general purpose switching and amplifier transistor |
ITT Semiconductors |
| 8601 |
2N3905 |
PNP SILICON PLANAR EPITAXIAL TRANSISTORS |
Micro Electronics |
| 8602 |
2N3905 |
PNP silicon annular transistor, TO-92 case |
Motorola |
| 8603 |
2N3905 |
Silicon PNP Transistor |
Motorola |
| 8604 |
2N3905 |
PNP Transistor - General Purpose AMPS and Switches |
National Semiconductor |
| 8605 |
2N3905 |
PNP Silicon Transistor |
NEC |
| 8606 |
2N3905 |
General Purpose Transistors(PNP Silicon) |
ON Semiconductor |
| 8607 |
2N3905 |
PNP EPITAXIAL SILICON TRANSISTOR |
Samsung Electronic |
| 8608 |
2N3905 |
NPN Silicon Expitaxial Planar Transistor for switching and amplifier applications |
Semtech |
| 8609 |
2N3905 |
Silicon NPN epitaxial transistor (PCT Process) |
TOSHIBA |
| 8610 |
2N3905 |
General purpose transistor. Collector-emitter voltage: Vceo = -40V. Collector-base voltage: Vcbo = -40V. Collector dissipation: Pc(max) = -625mW. |
USHA India LTD |
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