| No. |
Part Name |
Description |
Manufacturer |
| 8611 |
2N3905-D |
General Purpose Transistors PNP Silicon |
ON Semiconductor |
| 8612 |
2N3906 |
PNP Silicon Transistor (General small signal application Switching application) |
AUK Corp |
| 8613 |
2N3906 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
| 8614 |
2N3906 |
0.625W General Purpose PNP Plastic Leaded Transistor. 40V Vceo, 0.200A Ic, 60 - hFE |
Continental Device India Limited |
| 8615 |
2N3906 |
Si-Epitaxial PlanarTransistors |
Diotec Elektronische |
| 8616 |
2N3906 |
Low Noise PNP Transistor |
FERRANTI |
| 8617 |
2N3906 |
Switching PNP transistor |
FERRANTI |
| 8618 |
2N3906 |
Planar epitaxial PNP silicon transistor. -40V, 200mA. |
General Electric Solid State |
| 8619 |
2N3906 |
SMALL SIGNAL TRANSISTORS (PNP) |
General Semiconductor |
| 8620 |
2N3906 |
PNP Silicon Epitaxial Planar Transistor |
Honey Technology |
| 8621 |
2N3906 |
PNP silicon general purpose switching and amplifier transistor |
ITT Semiconductors |
| 8622 |
2N3906 |
Switching Transistor |
Korea Electronics (KEC) |
| 8623 |
2N3906 |
Vce=1.0V transistor |
MCC |
| 8624 |
2N3906 |
PNP SILICON PLANAR EPITAXIAL TRANSISTORS |
Micro Electronics |
| 8625 |
2N3906 |
PNP silicon annular transistor, TO-92 case |
Motorola |
| 8626 |
2N3906 |
Silicon PNP Transistor |
Motorola |
| 8627 |
2N3906 |
PNP Transistor - General Purpose AMPS and Switches |
National Semiconductor |
| 8628 |
2N3906 |
PNP Silicon Transistor |
NEC |
| 8629 |
2N3906 |
PNP switching transistor |
Philips |
| 8630 |
2N3906 |
Transistors > Small Signal Bipolar Transistors(up to 0.6W) |
ROHM |
| 8631 |
2N3906 |
Transistors > Small Signal Bipolar Transistors(up to 0.6W) |
ROHM |
| 8632 |
2N3906 |
PNP Epitaxial Silicon Transistor |
Samsung Electronic |
| 8633 |
2N3906 |
NPN Silicon Expitaxial Planar Transistor for switching and amplifier applications |
Semtech |
| 8634 |
2N3906 |
SMALL SIGNAL PNP TRANSISTOR |
SGS Thomson Microelectronics |
| 8635 |
2N3906 |
SMALL SIGNAL PNP TRANSISTOR |
ST Microelectronics |
| 8636 |
2N3906 |
Silicon PNP epitaxial transistor (PCT Process) |
TOSHIBA |
| 8637 |
2N3906 |
40 V, PNP small signal transistor |
TRANSYS Electronics Limited |
| 8638 |
2N3906 |
PNP SMALL SIGNAL TRANSISTOR |
TRSYS |
| 8639 |
2N3906 |
General purpose transistor. Collector-emitter voltage: Vceo = -40V. Collector-base voltage: Vcbo = -40V. Collector dissipation: Pc(max) = -625mW. |
USHA India LTD |
| 8640 |
2N3906 |
Small Signal Transistor (PNP) |
Vishay |
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