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Datasheets for T TR

Datasheets found :: 17865
Page: | 284 | 285 | 286 | 287 | 288 | 289 | 290 | 291 | 292 |
No. Part Name Description Manufacturer
8611 IRF352 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 13A. General Electric Solid State
8612 IRF353 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 13A. General Electric Solid State
8613 IRF420 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 2.5A. General Electric Solid State
8614 IRF421 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 2.5A. General Electric Solid State
8615 IRF422 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 2.0A. General Electric Solid State
8616 IRF423 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 2.0A. General Electric Solid State
8617 IRF430 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 4.5A. General Electric Solid State
8618 IRF431 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 4.5A. General Electric Solid State
8619 IRF432 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 4.0A. General Electric Solid State
8620 IRF433 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 4.0A. General Electric Solid State
8621 IRF450 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 13A. General Electric Solid State
8622 IRF451 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 13A. General Electric Solid State
8623 IRF452 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 12A. General Electric Solid State
8624 IRF453 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 12A. General Electric Solid State
8625 IRF510 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 4.0A. General Electric Solid State
8626 IRF511 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current(at Tc 25deg) 4.0A. General Electric Solid State
8627 IRF512 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 3.5A. General Electric Solid State
8628 IRF513 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current(at Tc 25deg) 3.5A. General Electric Solid State
8629 IRF530 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 14A. General Electric Solid State
8630 IRF530 N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR Motorola
8631 IRF530 100 V,power field effect transistor TRANSYS Electronics Limited
8632 IRF530-D TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate ON Semiconductor
8633 IRF531 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current(at Tc 25deg) 14A. General Electric Solid State
8634 IRF531 N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR Motorola
8635 IRF532 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 12A. General Electric Solid State
8636 IRF532 N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR Motorola
8637 IRF533 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current(at Tc 25deg) 12A. General Electric Solid State
8638 IRF533 N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR Motorola
8639 IRF540-D TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate ON Semiconductor
8640 IRF610 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 2.5A. General Electric Solid State


Datasheets found :: 17865
Page: | 284 | 285 | 286 | 287 | 288 | 289 | 290 | 291 | 292 |



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