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Datasheets for T TR

Datasheets found :: 17865
Page: | 286 | 287 | 288 | 289 | 290 | 291 | 292 | 293 | 294 |
No. Part Name Description Manufacturer
8671 IRF830-D Power Field Effect Transistor N-Channel Enhancement Mode Silicon Gate TMOS ON Semiconductor
8672 IRF831 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 4.5A. General Electric Solid State
8673 IRF832 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 4.0A. General Electric Solid State
8674 IRF833 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 4.0A. General Electric Solid State
8675 IRF840 N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR Motorola
8676 IRF841 N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR Motorola
8677 IRF842 N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR Motorola
8678 IRF843 N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR Motorola
8679 IRF9240SMD 200V Vdss P-Channel FET (field effect transistor) SemeLAB
8680 IRF9Z20 (IRF9Z22) HEXFET Transistors International Rectifier
8681 IRFD213 (IRFD210) TMOS Field Effect Transistor Dual In-Line Pachage Motorola
8682 IRFD9020 HEXFET TRANSISTORS P CHANNEL HEXDIP International Rectifier
8683 IRFD9022 HEXFET TRANSISTORS P CHANNEL HEXDIP International Rectifier
8684 IRFE230 200V Vdss N-Channel FET (field effect transistor) SemeLAB
8685 IRFF110 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 3.5A. General Electric Solid State
8686 IRFF110 N-channel enhancement-mode silicon gate TMOS small-signal field effect transistor. Motorola
8687 IRFF111 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 3.5A. General Electric Solid State
8688 IRFF112 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 3.0A. General Electric Solid State
8689 IRFF113 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 3.0A. General Electric Solid State
8690 IRFF113 N-channel enhancement-mode silicon gate TMOS small-signal field effect transistor. Motorola
8691 IRFF120 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 6.0A. General Electric Solid State
8692 IRFF121 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 50V. Continuous drain current 6.0A. General Electric Solid State
8693 IRFF122 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 5.0A. General Electric Solid State
8694 IRFF123 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 5.0A. General Electric Solid State
8695 IRFF130 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 8.0A. General Electric Solid State
8696 IRFF131 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 8.0A. General Electric Solid State
8697 IRFF132 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 7.0A. General Electric Solid State
8698 IRFF133 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 7.0A. General Electric Solid State
8699 IRFM250D 200V Vdss N-Channel FET (field effect transistor) SemeLAB
8700 IRFP251 (IRFP252 / IRFP253) N-Channel(Hexfet Transistors) International Rectifier


Datasheets found :: 17865
Page: | 286 | 287 | 288 | 289 | 290 | 291 | 292 | 293 | 294 |



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