No. |
Part Name |
Description |
Manufacturer |
871 |
2N5550 |
High Voltage Transistor |
Korea Electronics (KEC) |
872 |
2N5550 |
SILICON GENERAL PURPOSE HIGH VOLTAGE TRANSISTORS |
Micro Electronics |
873 |
2N5550 |
NPN Silicon Expitaxial Planar Transistor for general purpose/ high voltage amplifier applications |
Semtech |
874 |
2N5550S |
High Voltage Transistor |
Korea Electronics (KEC) |
875 |
2N5551 |
NPN Silicon Transistor (General purpose amplifier High voltage application) |
AUK Corp |
876 |
2N5551 |
NPN EPITAXIAL PLANAR SILICON HIGH VOLTAGE TRANSISTOR |
Boca Semiconductor Corporation |
877 |
2N5551 |
High Voltage Transistor |
Korea Electronics (KEC) |
878 |
2N5551 |
SILICON GENERAL PURPOSE HIGH VOLTAGE TRANSISTORS |
Micro Electronics |
879 |
2N5551 |
NPN Silicon Expitaxial Planar Transistor for general purpose/ high voltage amplifier applications |
Semtech |
880 |
2N5551C |
High Voltage Transistor |
Korea Electronics (KEC) |
881 |
2N5551S |
High Voltage Transistor |
Korea Electronics (KEC) |
882 |
2N5551SC |
High Voltage Transistor |
Korea Electronics (KEC) |
883 |
2N5630 |
Collector-emitter/base voltage: 120Vdc; 16Amp; high-voltage, high-power transistor. For high power audio amplifier applications and high voltage switching regulator circuits |
Motorola |
884 |
2N5631 |
Collector-emitter/base voltage: 140Vdc; 16Amp; high-voltage, high-power transistor. For high power audio amplifier applications and high voltage switching regulator circuits |
Motorola |
885 |
2N5679 |
PNP/NPN HIGH VOLTAGE SILICON TRANSISTORS |
Boca Semiconductor Corporation |
886 |
2N5679 |
10.000W High Voltage PNP Metal Can Transistor. 100V Vceo, 1.000A Ic, 5 hFE. |
Continental Device India Limited |
887 |
2N5680 |
PNP/NPN HIGH VOLTAGE SILICON TRANSISTORS |
Boca Semiconductor Corporation |
888 |
2N5680 |
10.000W High Voltage PNP Metal Can Transistor. 120V Vceo, 1.000A Ic, 5 hFE. |
Continental Device India Limited |
889 |
2N5681 |
PNP/NPN HIGH VOLTAGE SILICON TRANSISTORS |
Boca Semiconductor Corporation |
890 |
2N5681 |
10.000W High Voltage NPN Metal Can Transistor. 100V Vceo, 1.000A Ic, 5 hFE. |
Continental Device India Limited |
891 |
2N5682 |
PNP/NPN HIGH VOLTAGE SILICON TRANSISTORS |
Boca Semiconductor Corporation |
892 |
2N5682 |
10.000W High Voltage NPN Metal Can Transistor. 120V Vceo, 1.000A Ic, 5 hFE. |
Continental Device India Limited |
893 |
2N5831 |
NPN small signal high voltage general purpose amplifier. |
Fairchild Semiconductor |
894 |
2N5833 |
NPN small signal high voltage general purpose amplifier. |
Fairchild Semiconductor |
895 |
2N6030 |
Collector-emitter/base voltage: 120Vdc; 16Amp; high-voltage, high-power transistor. For high power audio amplifier applications and high voltage switching regulator circuits |
Motorola |
896 |
2N6031 |
Collector-emitter/base voltage: 140Vdc; 16Amp; high-voltage, high-power transistor. For high power audio amplifier applications and high voltage switching regulator circuits |
Motorola |
897 |
2N6211 |
MEDIUM-POWER HIGH VOLTAGE PNP POWER TRANSISTORS |
Boca Semiconductor Corporation |
898 |
2N6212 |
MEDIUM-POWER HIGH VOLTAGE PNP POWER TRANSISTORS |
Boca Semiconductor Corporation |
899 |
2N6213 |
MEDIUM-POWER HIGH VOLTAGE PNP POWER TRANSISTORS |
Boca Semiconductor Corporation |
900 |
2N6259 |
High voltage, high power transistor. 170V, 250W. |
General Electric Solid State |
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