| No. |
Part Name |
Description |
Manufacturer |
| 931 |
2N6516 |
NPN Epitaxial Silicon Transistor - High Voltage Transistor |
Fairchild Semiconductor |
| 932 |
2N6516 |
High voltage transistor. Collector-emitter voltage: Vceo = 250V. Collector-base voltage: Vcbo = 250V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 933 |
2N6517 |
NPN Epitaxial Silicon Transistor - High Voltage Transistor |
Fairchild Semiconductor |
| 934 |
2N6517 |
High Voltage Transistor 625mW |
Micro Commercial Components |
| 935 |
2N6517 |
High Voltage Transistors |
ON Semiconductor |
| 936 |
2N6517 |
High voltage transistor. Collector-emitter voltage: Vceo = 350V. Collector-base voltage: Vcbo = 350V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 937 |
2N6517RLRA |
High Voltage Transistors |
ON Semiconductor |
| 938 |
2N6517RLRP |
High Voltage Transistors |
ON Semiconductor |
| 939 |
2N6518 |
PNP Epitaxial Silicon Transistor - High Voltage Transistor |
Fairchild Semiconductor |
| 940 |
2N6518 |
High voltage transistor. Collector-emitter voltage: Vceo = -250V. Collector-base voltage: Vcbo = -250V. Collector dissipation: Pc(max) = 0.625W. |
USHA India LTD |
| 941 |
2N6519 |
PNP Epitaxial Silicon Transistor - High Voltage Transistor |
Fairchild Semiconductor |
| 942 |
2N6519 |
High Voltage Transistor 625mW |
Micro Commercial Components |
| 943 |
2N6519 |
High Voltage Transistors |
ON Semiconductor |
| 944 |
2N6519 |
High voltage transistor. Collector-emitter voltage: Vceo = -300V. Collector-base voltage: Vcbo = -300V. Collector dissipation: Pc(max) = 0.625W. |
USHA India LTD |
| 945 |
2N6519RLRA |
High Voltage Transistors |
ON Semiconductor |
| 946 |
2N6520 |
PNP Epitaxial Silicon Transistor - High Voltage Transistor |
Fairchild Semiconductor |
| 947 |
2N6520 |
High Voltage Transistor 625mW |
Micro Commercial Components |
| 948 |
2N6520 |
High Voltage Transistors |
ON Semiconductor |
| 949 |
2N6520 |
High voltage transistor. Collector-emitter voltage: Vceo = -350V. Collector-base voltage: Vcbo = -350V. Collector dissipation: Pc(max) = 0.625W. |
USHA India LTD |
| 950 |
2N6520RL1 |
High Voltage Transistors |
ON Semiconductor |
| 951 |
2N6520RLRA |
High Voltage Transistors |
ON Semiconductor |
| 952 |
2N6520RLRM |
High Voltage Transistors |
ON Semiconductor |
| 953 |
2N6653 |
Silicon high power, high voltage switching NPN transistor - metal case |
IPRS Baneasa |
| 954 |
2N6653 |
Silicon NPN High Power High Voltage Switching Transistor |
IPRS Baneasa |
| 955 |
2N6653/1 |
Silicon high power, high voltage switching NPN transistor - metal case |
IPRS Baneasa |
| 956 |
2N6653/1 |
Silicon NPN High Power High Voltage Switching Transistor |
IPRS Baneasa |
| 957 |
2N6653/2 |
Silicon high power, high voltage switching NPN transistor - metal case |
IPRS Baneasa |
| 958 |
2N6653/2 |
Silicon NPN High Power High Voltage Switching Transistor |
IPRS Baneasa |
| 959 |
2N6653/3 |
Silicon high power, high voltage switching NPN transistor - metal case |
IPRS Baneasa |
| 960 |
2N6653/3 |
Silicon NPN High Power High Voltage Switching Transistor |
IPRS Baneasa |
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