| No. |
Part Name |
Description |
Manufacturer |
| 871 |
2SD812 |
Si NPN triple diffused planar. High power amplifier. |
Panasonic |
| 872 |
2SD837A |
Si NPN triple diffused planar darlington. AF power amplifier. |
Panasonic |
| 873 |
2SD856 |
Si NPN epitaxial planar. AF power amplifier. |
Panasonic |
| 874 |
2SD856A |
Si NPN epitaxial planar. AF power amplifier. |
Panasonic |
| 875 |
2SD857 |
Si NPN triple diffused planar. AF power amplifier. |
Panasonic |
| 876 |
2SD857A |
Si NPN triple diffused planar. AF power amplifier. |
Panasonic |
| 877 |
2SD876 |
Si NPN triple diffused planar. High hFE, AF power amplifier. |
Panasonic |
| 878 |
2SD878 |
HIGH POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
| 879 |
2SD880 |
NPN EPITAXIAL SILICON TRANSISTOR(LOW FREQUENCY POWER AMPLIFIER) |
Wing Shing Computer Components |
| 880 |
2SD880Y |
NPN silicon plastic power transistor. Designed for low frequency power amplifier. Vceo =60V, DC current gain: 20 @ Ic = 3A. Pd = 30W. |
USHA India LTD |
| 881 |
2SD886 |
Si NPN triple diffused planar. High hFE, AF power amplifier. |
Panasonic |
| 882 |
2SD886A |
Si NPN triple diffused planar. High hFE, AF power amplifier. |
Panasonic |
| 883 |
2SD888 |
High hff,AF Power Amplifier |
Unknow |
| 884 |
2SD973 |
Silicon NPN epitaxial planer type(For low-frequency power amplification) |
Panasonic |
| 885 |
2SJ200 |
Field Effect Transistor Silicon P Channel MOS Type High Power Amplifier Application |
TOSHIBA |
| 886 |
2SJ201 |
Field Effect Transistor Silicon P Channel MOS Type High Power Amplifier Application |
TOSHIBA |
| 887 |
2SJ313 |
Field Effect Transistor Silicon P Channel MOS Type Audio Frequency Power Amplifier Application |
TOSHIBA |
| 888 |
2SJ338 |
Field Effect Transistor Silicon P Channel MOS Type Audio Frequency Power Amplifier Application |
TOSHIBA |
| 889 |
2SJ440 |
FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE - AUDIO FREQUENCY POWER AMPLIFIER APPLICATION |
TOSHIBA |
| 890 |
2SJ440-Y |
P CHANNEL MOS TYPE (AUDIO FREQUENCY POWER AMPLIFIER APPLICATION) |
TOSHIBA |
| 891 |
2SJ48 |
LOW FREQUENCY POWER AMPLIFIER |
Hitachi Semiconductor |
| 892 |
2SJ49 |
LOW FREQUENCY POWER AMPLIFIER |
Hitachi Semiconductor |
| 893 |
2SJ50 |
LOW FREQUENCY POWER AMPLIFIER |
Hitachi Semiconductor |
| 894 |
2SJ55 |
Silicon P-Channel MOS FET, for low frequency power amplifier, complementary pair with 2SK175 |
Hitachi Semiconductor |
| 895 |
2SJ56 |
Silicon P-Channel MOS FET, for low frequency power amplifier, complementary pair with 2SK176 |
Hitachi Semiconductor |
| 896 |
2SK133 |
LOW FREQUENCY POWER AMPLIFIER |
Hitachi Semiconductor |
| 897 |
2SK134 |
LOW FREQUENCY POWER AMPLIFIER |
Hitachi Semiconductor |
| 898 |
2SK135 |
LOW FREQUENCY POWER AMPLIFIER |
Hitachi Semiconductor |
| 899 |
2SK1529 |
Field Effect Transistor Silicon N Channel MOS Type High Power Amplifier Application |
TOSHIBA |
| 900 |
2SK1530 |
Field Effect Transistor Silicon N Channel MOS Type High Power Amplifier Application |
TOSHIBA |
| | | |
