No. |
Part Name |
Description |
Manufacturer |
901 |
2SK1611 |
V(dss): 800V; silicon N-channel powe F-MOS FET. For high-speed switching, for high frequency power amplification |
Panasonic |
902 |
2SK2013 |
Field Effect Transistor Silicon N Channel MOS Type Audio Frequency Power Amplifier Application |
TOSHIBA |
903 |
2SK2162 |
FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE AUDIO FREQUENCY POWER AMPLIFIER APPLICATION |
TOSHIBA |
904 |
2SK2467 |
FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE HIGH POWER AMPLIFIER APPLICATION |
TOSHIBA |
905 |
2SK2467-Y |
N CHANNEL MOS TYPE (HIGH POWER AMPLIFIER APPLICATIONS) |
TOSHIBA |
906 |
2SK2597 |
N-CHANNEL SILICON POWER MOSFET FOR BASE STATION OF 900 MHz BAND CELLULAR PHONE POWER AMPLIFICATION |
NEC |
907 |
2SK2795 |
Silicon N Channel MOS FET UHF Power Amplifier |
Hitachi Semiconductor |
908 |
2SK2922 |
Silicon N Channel MOS FET UHF Power Amplifier |
Hitachi Semiconductor |
909 |
2SK3074 |
FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE RF POWER MOSFET FOR VHF .AND UHF-BAND POWER AMPLIFIER |
TOSHIBA |
910 |
2SK3075 |
FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE RF POWER MOSFET FOR VHF .AND UHF .BAND POWER AMPLIFIER |
TOSHIBA |
911 |
2SK3391JX |
Silicon N-Channel MOS FET UHF Power Amplifier |
Renesas |
912 |
2SK410 |
Silicon N-Channel MOS FET (HF/VHF power amplifier) |
Hitachi Semiconductor |
913 |
2SK511 |
HIGH FREQUENCY POWER AMPLIFIER |
Hitachi Semiconductor |
914 |
30A01C |
PNP Bipolar Transistor for Audio Power Amplifier Applications |
ON Semiconductor |
915 |
3718 |
LOW-VOLTAGE AUDIO POWER AMPLIFIER |
Allegro MicroSystems |
916 |
40250 |
Silicon HOMETAXIAL NPN transistor, AF power amplifier |
SGS-ATES |
917 |
40251 |
Silicon HOMETAXIAL NPN transistor, AF power amplifier |
SGS-ATES |
918 |
40636 |
Silicon HOMETAXIAL NPN transistor, HI-FI power amplifier |
SGS-ATES |
919 |
40940 |
5W, 400MHz Silicon NPN Overlay Transistor for VHF/UHF High-Power Amplifiers, Warning - device contains beryllium oxide |
RCA Solid State |
920 |
472911207-001 |
350mWAudio Power Amplifier with Shutdown Mode |
Chengdu Sino Microelectronics System |
921 |
482911183-001 |
350mWAudio Power Amplifier with Shutdown Mode |
Chengdu Sino Microelectronics System |
922 |
500-30-100-35-E3 |
RF POWER AMPLIFIER MODULE |
etc |
923 |
5670BM |
MEMA (Micro Electronic Modular Assembley) RF POWER AMPLIFIER |
Amelco Semiconductor |
924 |
7143 |
Integrated Circuit Audio Power Amplifier, 20W |
NTE Electronics |
925 |
A21SP16 |
3 W filter-free class-D audio power amplifier |
ST Microelectronics |
926 |
A21SP16J |
3 W filter-free class-D audio power amplifier |
ST Microelectronics |
927 |
AA022P1-00 |
18�23 GHz GaAs MMIC Power Amplifier |
Alpha Industries Inc |
928 |
AA022P2-00 |
21�23 GHz GaAs MMIC Medium Power Amplifier |
Alpha Industries Inc |
929 |
AA026P2-00 |
23.5�26.5 GHz GaAs MMIC Power Amplifier |
Alpha Industries Inc |
930 |
AA026P2-A4 |
23.5�26.5 GHz Surface Mount Medium Power Amplifier |
Alpha Industries Inc |
| | | |