| No. |
Part Name |
Description |
Manufacturer |
| 91 |
1920CD60 |
60 W, 25 V, 1930-1990 MHz common emitter transistor |
GHz Technology |
| 92 |
1922-18 |
1.9-2.2GHz 18W 24V NPN transistor for microwave telecommunication applications |
SGS Thomson Microelectronics |
| 93 |
1N5149 |
Silicon high-frequency step-recovery power varactor for 100MHz to 2.0 GHz harmonic-generation applications, output power to 25W al 1GHz |
Motorola |
| 94 |
1N5150 |
Silicon high-frequency step-recovery power varactor for 100MHz to 2.0 GHz harmonic-generation applications, output power to 25W al 1GHz |
Motorola |
| 95 |
1SS97 |
Characteristics of 2GHz band mixer using-1SS97, 1SS98 and 1SS99 Aplication Note |
NEC |
| 96 |
1SS98 |
Characteristics of 2GHz band mixer using-1SS97, 1SS98 and 1SS99 Aplication Note |
NEC |
| 97 |
1SS99 |
Characteristics of 2GHz band mixer using-1SS97, 1SS98 and 1SS99 Aplication Note |
NEC |
| 98 |
2001 |
1 W, 28 V, 2000 MHz common base transistor |
GHz Technology |
| 99 |
2001 |
2GHz 1W 28V NPN microwave power transistor for Class C applications |
SGS Thomson Microelectronics |
| 100 |
2003 |
3 W, 28 V, 2000 MHz common base transistor |
GHz Technology |
| 101 |
2003 |
2GHz 3W 28V NPN microwave power transistor for Class C applications |
SGS Thomson Microelectronics |
| 102 |
2005 |
5 W, 28 V, 2000 MHz common base transistor |
GHz Technology |
| 103 |
2005 |
2GHz 5W 28V NPN microwave power transistor for Class C applications |
SGS Thomson Microelectronics |
| 104 |
2010 |
10 W, 28 V, 2000 MHz common base transistor |
GHz Technology |
| 105 |
2010 |
2GHz 10W 28V NPN microwave power transistor for Class C applications |
SGS Thomson Microelectronics |
| 106 |
2015M |
15 W, 28 V, 2000 MHz common base transistor |
GHz Technology |
| 107 |
2021-25 |
25 W, 24 V, 2000-2130 MHz common base transistor |
GHz Technology |
| 108 |
2023-1 |
Is an internally-matched device (transistor) decifically designed for 2GHz telecommunications and telemetry applications |
SGS Thomson Microelectronics |
| 109 |
2023-16 |
2.0-2.3GHz 16W 24V NPN microwave power transistor for Class C applications |
SGS Thomson Microelectronics |
| 110 |
2023-3 |
Is an internally-matched device (transistor) decifically designed for 2GHz telecommunications and telemetry applications |
SGS Thomson Microelectronics |
| 111 |
2023-6 |
Is an internally-matched device (transistor) decifically designed for 2GHz telecommunications and telemetry applications |
SGS Thomson Microelectronics |
| 112 |
2023-6 |
2.0-2.3GHz 6W 24V NPN microwave power transistor for Class C applications |
SGS Thomson Microelectronics |
| 113 |
20L08 |
2.0GHz 0.8W 20V NPN silicon RF transistor designed for high gain linear performance |
SGS Thomson Microelectronics |
| 114 |
20L15 |
2.0GHz 1.5W 20V NPN silicon RF transistor designed for high gain linear performance |
SGS Thomson Microelectronics |
| 115 |
2100 |
2.0GHz 0.316W 20V NPN silicon RF transistor designed for high gain linear performance |
SGS Thomson Microelectronics |
| 116 |
2124-12L |
12 W, 22 V, 2200-2400 MHz common base transistor |
GHz Technology |
| 117 |
2223-1.7 |
1.7 W, 24 V, 2200-2300 MHz common base transistor |
GHz Technology |
| 118 |
2223-10 |
2.2-2.3GHz 10W 24V NPN silicon transistor designed for microwave applications |
SGS Thomson Microelectronics |
| 119 |
2223-18 |
2.2-2.3GHz 18W 24V NPN silicon transistor designed for microwave applications |
SGS Thomson Microelectronics |
| 120 |
2223-3 |
2.2-2.3GHz 3W 24V NPN silicon transistor designed for microwave applications |
SGS Thomson Microelectronics |
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