| No. |
Part Name |
Description |
Manufacturer |
| 9451 |
IRF540-D |
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 9452 |
IRF541 |
MOSPOWER N-Channel Enhancement Mode Transistor 60V 27A |
Siliconix |
| 9453 |
IRF542 |
MOSPOWER N-Channel Enhancement Mode Transistor 100V 24A |
Siliconix |
| 9454 |
IRF543 |
MOSPOWER N-Channel Enhancement Mode Transistor 60V 24A |
Siliconix |
| 9455 |
IRF610 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 2.5A. |
General Electric Solid State |
| 9456 |
IRF610 |
MOSPOWER N-Channel Enhancement Mode Transistor 200V 2.5A |
Siliconix |
| 9457 |
IRF611 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 2.5A. |
General Electric Solid State |
| 9458 |
IRF611 |
MOSPOWER N-Channel Enhancement Mode Transistor 150V 2.5A |
Siliconix |
| 9459 |
IRF612 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 2.0A. |
General Electric Solid State |
| 9460 |
IRF612 |
MOSPOWER N-Channel Enhancement Mode Transistor 200V 2A |
Siliconix |
| 9461 |
IRF613 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 2.0A. |
General Electric Solid State |
| 9462 |
IRF613 |
MOSPOWER N-Channel Enhancement Mode Transistor 150V 2A |
Siliconix |
| 9463 |
IRF620 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 5.0A. |
General Electric Solid State |
| 9464 |
IRF620 |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS |
SGS Thomson Microelectronics |
| 9465 |
IRF620 |
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS |
SGS Thomson Microelectronics |
| 9466 |
IRF620 |
MOSPOWER N-Channel Enhancement Mode Transistor 200V 5A |
Siliconix |
| 9467 |
IRF620FI |
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS |
SGS Thomson Microelectronics |
| 9468 |
IRF620FI |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS |
SGS Thomson Microelectronics |
| 9469 |
IRF621 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 5.0A. |
General Electric Solid State |
| 9470 |
IRF621 |
MOSPOWER N-Channel Enhancement Mode Transistor 150V 5A |
Siliconix |
| 9471 |
IRF622 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 4.0A. |
General Electric Solid State |
| 9472 |
IRF622 |
MOSPOWER N-Channel Enhancement Mode Transistor 200V 4A |
Siliconix |
| 9473 |
IRF623 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 4.0A. |
General Electric Solid State |
| 9474 |
IRF623 |
MOSPOWER N-Channel Enhancement Mode Transistor 150V 4A |
Siliconix |
| 9475 |
IRF630 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 9.0A. |
General Electric Solid State |
| 9476 |
IRF630 |
MOSPOWER N-Channel Enhancement Mode Transistor 200V 9A |
Siliconix |
| 9477 |
IRF631 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 9.0A. |
General Electric Solid State |
| 9478 |
IRF631 |
MOSPOWER N-Channel Enhancement Mode Transistor 150V 9A |
Siliconix |
| 9479 |
IRF632 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 8.0A. |
General Electric Solid State |
| 9480 |
IRF632 |
MOSPOWER N-Channel Enhancement Mode Transistor 200V 8A |
Siliconix |
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