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Datasheets for EMENT

Datasheets found :: 24349
Page: | 314 | 315 | 316 | 317 | 318 | 319 | 320 | 321 | 322 |
No. Part Name Description Manufacturer
9511 IRF741 MOSPOWER N-Channel Enhancement Mode Transistor 350V 10A Siliconix
9512 IRF742 MOSPOWER N-Channel Enhancement Mode Transistor 400V 8.0A Siliconix
9513 IRF743 MOSPOWER N-Channel Enhancement Mode Transistor 350V 8.0A Siliconix
9514 IRF82 N CHANNEL ENHANCEMENT MODE POWER MOSTRANSISTORS ST Microelectronics
9515 IRF820 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 2.5A. General Electric Solid State
9516 IRF820 N-CHANNEL Enhancement-Mode Silicon Gate TMOS Motorola
9517 IRF820 MOSPOWER N-Channel Enhancement Mode Transistor 500V 2.5A Siliconix
9518 IRF820FI N-channel enhancement mode power MOS transistor, 500V, 2.2A SGS Thomson Microelectronics
9519 IRF821 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 2.5A. General Electric Solid State
9520 IRF821 N-CHANNEL Enhancement-Mode Silicon Gate TMOS Motorola
9521 IRF821 MOSPOWER N-Channel Enhancement Mode Transistor 450V 2.5A Siliconix
9522 IRF822 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 2.0A. General Electric Solid State
9523 IRF822 N-channel enhancement mode power MOS transistor, 500V, 2.8A SGS Thomson Microelectronics
9524 IRF822 MOSPOWER N-Channel Enhancement Mode Transistor 500V 2.0A Siliconix
9525 IRF822FI N-channel enhancement mode power MOS transistor, 500V, 1.9A SGS Thomson Microelectronics
9526 IRF822FI N CHANNEL ENHANCEMENT MODE POWER MOSTRANSISTORS ST Microelectronics
9527 IRF823 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 2.0A. General Electric Solid State
9528 IRF823 N-CHANNEL Enhancement-Mode Silicon Gate TMOS Motorola
9529 IRF823 MOSPOWER N-Channel Enhancement Mode Transistor 450V 2.0A Siliconix
9530 IRF82FI N CHANNEL ENHANCEMENT MODE POWER MOSTRANSISTORS ST Microelectronics
9531 IRF830 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 4.5A. General Electric Solid State
9532 IRF830 MOSPOWER N-Channel Enhancement Mode Transistor 500V 4.5A Siliconix
9533 IRF830 N-CHANNEL ENHANCEMENT MODE TRSYS
9534 IRF830-D Power Field Effect Transistor N-Channel Enhancement Mode Silicon Gate TMOS ON Semiconductor
9535 IRF831 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 4.5A. General Electric Solid State
9536 IRF831 MOSPOWER N-Channel Enhancement Mode Transistor 450V 4.5A Siliconix
9537 IRF832 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 4.0A. General Electric Solid State
9538 IRF832 MOSPOWER N-Channel Enhancement Mode Transistor 500V 4.0A Siliconix
9539 IRF833 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 4.0A. General Electric Solid State
9540 IRF833 MOSPOWER N-Channel Enhancement Mode Transistor 450V 4.0A Siliconix


Datasheets found :: 24349
Page: | 314 | 315 | 316 | 317 | 318 | 319 | 320 | 321 | 322 |



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