No. |
Part Name |
Description |
Manufacturer |
9781 |
TC514410AP-10 |
100 ns, 4-bit generation dynamic RAM |
TOSHIBA |
9782 |
TC514410AP-60 |
60 ns, 4-bit generation dynamic RAM |
TOSHIBA |
9783 |
TC514410AP-70 |
70 ns, 4-bit generation dynamic RAM |
TOSHIBA |
9784 |
TC514410AP-80 |
80 ns, 4-bit generation dynamic RAM |
TOSHIBA |
9785 |
TC514410ASJ-10 |
100 ns, 4-bit generation dynamic RAM |
TOSHIBA |
9786 |
TC514410ASJ-60 |
60 ns, 4-bit generation dynamic RAM |
TOSHIBA |
9787 |
TC514410ASJ-70 |
70 ns, 4-bit generation dynamic RAM |
TOSHIBA |
9788 |
TC514410ASJ-80 |
80 ns, 4-bit generation dynamic RAM |
TOSHIBA |
9789 |
TC514410AZ-10 |
100 ns, 4-bit generation dynamic RAM |
TOSHIBA |
9790 |
TC514410AZ-60 |
60 ns, 4-bit generation dynamic RAM |
TOSHIBA |
9791 |
TC514410AZ-70 |
70 ns, 4-bit generation dynamic RAM |
TOSHIBA |
9792 |
TC514410AZ-80 |
80 ns, 4-bit generation dynamic RAM |
TOSHIBA |
9793 |
TC514410J-10 |
100 ns, 4-bit generation dynamic RAM |
TOSHIBA |
9794 |
TC514410J-80 |
80 ns, 4-bit generation dynamic RAM |
TOSHIBA |
9795 |
TC514410Z-10 |
100 ns, 4-bit generation dynamic RAM |
TOSHIBA |
9796 |
TC514410Z-80 |
80 ns, 4-bit generation dynamic RAM |
TOSHIBA |
9797 |
TC51832 |
Silicon Gate CMOS / 32768 word x 8 Bit CMOS Pseudo Static RAM |
TOSHIBA |
9798 |
TC51832F-10 |
100ns; V(in/out/dd): -1 to +7V; 600mW; 50mA; 32,768 word x 8-bit CMOS pseudo static RAM |
TOSHIBA |
9799 |
TC51832F-12 |
120ns; V(in/out/dd): -1 to +7V; 600mW; 50mA; 32,768 word x 8-bit CMOS pseudo static RAM |
TOSHIBA |
9800 |
TC51832F-85 |
85ns; V(in/out/dd): -1 to +7V; 600mW; 50mA; 32,768 word x 8-bit CMOS pseudo static RAM |
TOSHIBA |
9801 |
TC51832FL-10 |
100ns; V(in/out/dd): -1 to +7V; 600mW; 50mA; 32,768 word x 8-bit CMOS pseudo static RAM |
TOSHIBA |
9802 |
TC51832FL-12 |
120ns; V(in/out/dd): -1 to +7V; 600mW; 50mA; 32,768 word x 8-bit CMOS pseudo static RAM |
TOSHIBA |
9803 |
TC51832FL-85 |
85ns; V(in/out/dd): -1 to +7V; 600mW; 50mA; 32,768 word x 8-bit CMOS pseudo static RAM |
TOSHIBA |
9804 |
TC51832P-10 |
100ns; V(in/out/dd): -1 to +7V; 600mW; 50mA; 32,768 word x 8-bit CMOS pseudo static RAM |
TOSHIBA |
9805 |
TC51832P-12 |
120ns; V(in/out/dd): -1 to +7V; 600mW; 50mA; 32,768 word x 8-bit CMOS pseudo static RAM |
TOSHIBA |
9806 |
TC51832P-85 |
85ns; V(in/out/dd): -1 to +7V; 600mW; 50mA; 32,768 word x 8-bit CMOS pseudo static RAM |
TOSHIBA |
9807 |
TC51832PL-10 |
100ns; V(in/out/dd): -1 to +7V; 600mW; 50mA; 32,768 word x 8-bit CMOS pseudo static RAM |
TOSHIBA |
9808 |
TC51832PL-12 |
120ns; V(in/out/dd): -1 to +7V; 600mW; 50mA; 32,768 word x 8-bit CMOS pseudo static RAM |
TOSHIBA |
9809 |
TC51832PL-85 |
85ns; V(in/out/dd): -1 to +7V; 600mW; 50mA; 32,768 word x 8-bit CMOS pseudo static RAM |
TOSHIBA |
9810 |
TC51832SP-10 |
100ns; V(in/out/dd): -1 to +7V; 600mW; 50mA; 32,768 word x 8-bit CMOS pseudo static RAM |
TOSHIBA |
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