No. |
Part Name |
Description |
Manufacturer |
9811 |
TC51832SP-12 |
120ns; V(in/out/dd): -1 to +7V; 600mW; 50mA; 32,768 word x 8-bit CMOS pseudo static RAM |
TOSHIBA |
9812 |
TC51832SP-85 |
85ns; V(in/out/dd): -1 to +7V; 600mW; 50mA; 32,768 word x 8-bit CMOS pseudo static RAM |
TOSHIBA |
9813 |
TC51832SPL-10 |
100ns; V(in/out/dd): -1 to +7V; 600mW; 50mA; 32,768 word x 8-bit CMOS pseudo static RAM |
TOSHIBA |
9814 |
TC51832SPL-12 |
120ns; V(in/out/dd): -1 to +7V; 600mW; 50mA; 32,768 word x 8-bit CMOS pseudo static RAM |
TOSHIBA |
9815 |
TC51832SPL-85 |
85ns; V(in/out/dd): -1 to +7V; 600mW; 50mA; 32,768 word x 8-bit CMOS pseudo static RAM |
TOSHIBA |
9816 |
TC51WHM516AXBN |
SRAM - Pseudo SRAM |
TOSHIBA |
9817 |
TC51WHM516AXBN65 |
2,097,152-WORD BY 16-BIT CMOS PSEUDO STATIC RAM |
TOSHIBA |
9818 |
TC51WHM516AXBN70 |
2,097,152-WORD BY 16-BIT CMOS PSEUDO STATIC RAM |
TOSHIBA |
9819 |
TC51WHM516AXGN65 |
2,097,152-WORD BY 16-BIT CMOS PSEUDO STATIC RAM |
TOSHIBA |
9820 |
TC51WHM516AXGN70 |
2,097,152-WORD BY 16-BIT CMOS PSEUDO STATIC RAM |
TOSHIBA |
9821 |
TC51WHM616AXBN |
SRAM - Pseudo SRAM |
TOSHIBA |
9822 |
TC51WHM616AXBN65 |
4,194,304-WORD BY 16-BIT CMOS PSEUDO STATIC RAM |
TOSHIBA |
9823 |
TC51WHM616AXBN70 |
4,194,304-WORD BY 16-BIT CMOS PSEUDO STATIC RAM |
TOSHIBA |
9824 |
TC51WKM516AXBN |
SRAM - Pseudo SRAM |
TOSHIBA |
9825 |
TC51WKM516AXBN75 |
2,097,152-WORD BY 16-BIT CMOS PSEUDO STATIC RAM |
TOSHIBA |
9826 |
TC51WKM516AXGN65 |
2,097,152-WORD BY 16-BIT CMOS PSEUDO STATIC RAM |
TOSHIBA |
9827 |
TC51WKM516AXGN70 |
2,097,152-WORD BY 16-BIT CMOS PSEUDO STATIC RAM |
TOSHIBA |
9828 |
TC51WKM616AXBN |
SRAM - Pseudo SRAM |
TOSHIBA |
9829 |
TC51WKM616AXBN75 |
4,194,304-WORD BY 16-BIT CMOS PSEUDO STATIC RAM |
TOSHIBA |
9830 |
TC528128BJ-10 |
100ns; V(cc): -1 to +7V; V(in/out); -1.0 to +7.0V; 1W; 50mA; silicon gate CMOS 131.072 words x 8 Bits multiport DRAM |
TOSHIBA |
9831 |
TC528128BJ-80 |
80ns; V(cc): -1 to +7V; V(in/out); -1.0 to +7.0V; 1W; 50mA; silicon gate CMOS 131.072 words x 8 Bits multiport DRAM |
TOSHIBA |
9832 |
TC528128BZ-10 |
100ns; V(cc): -1 to +7V; V(in/out); -1.0 to +7.0V; 1W; 50mA; silicon gate CMOS 131.072 words x 8 Bits multiport DRAM |
TOSHIBA |
9833 |
TC528128BZ-80 |
80ns; V(cc): -1 to +7V; V(in/out); -1.0 to +7.0V; 1W; 50mA; silicon gate CMOS 131.072 words x 8 Bits multiport DRAM |
TOSHIBA |
9834 |
TC528267 |
262144 Words x 8 Bits Multiport DRAM |
TOSHIBA |
9835 |
TC531001CF |
150ns; V(dd): -0.5 to +7V; 1M bit (128K word x 8 bit) CMOS MASK ROM |
TOSHIBA |
9836 |
TC531001CP |
120ns; V(dd): -0.5 to +7V; 1M bit (128K word x 8 bit) CMOS MASK ROM |
TOSHIBA |
9837 |
TC531024F-12 |
120ns; 5V; 1M bit (65,536 word x 16bit) CMOS MASK ROM |
TOSHIBA |
9838 |
TC531024F-15 |
150ns; 5V; 1M bit (65,536 word x 16bit) CMOS MASK ROM |
TOSHIBA |
9839 |
TC531024P-12 |
120ns; 5V; 1M bit (65,536 word x 16bit) CMOS MASK ROM |
TOSHIBA |
9840 |
TC531024P-15 |
150ns; 5V; 1M bit (65,536 word x 16bit) CMOS MASK ROM |
TOSHIBA |
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