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Datasheets for AMS

Datasheets found :: 14624
Page: | 324 | 325 | 326 | 327 | 328 | 329 | 330 | 331 | 332 |
No. Part Name Description Manufacturer
9811 KM416V1004CJ-45 1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=3.3V, refresh period=64ms Samsung Electronic
9812 KM416V1004CJ-5 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 50ns Samsung Electronic
9813 KM416V1004CJ-50 1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=3.3V, refresh period=64ms Samsung Electronic
9814 KM416V1004CJ-6 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 60ns Samsung Electronic
9815 KM416V1004CJ-60 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=3.3V, refresh period=64ms Samsung Electronic
9816 KM416V1004CJ-L5 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 50ns Samsung Electronic
9817 KM416V1004CJ-L6 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 60ns Samsung Electronic
9818 KM416V1004CJL-45 1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=3.3V, self-refresh Samsung Electronic
9819 KM416V1004CJL-50 1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=3.3V, self-refresh Samsung Electronic
9820 KM416V1004CJL-60 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=3.3V, self-refresh Samsung Electronic
9821 KM416V1004CT-45 1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=3.3V, refresh period=64ms Samsung Electronic
9822 KM416V1004CT-5 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 50ns Samsung Electronic
9823 KM416V1004CT-50 1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=3.3V, refresh period=64ms Samsung Electronic
9824 KM416V1004CT-6 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 60ns Samsung Electronic
9825 KM416V1004CT-60 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=3.3V, refresh period=64ms Samsung Electronic
9826 KM416V1004CT-L5 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 50ns Samsung Electronic
9827 KM416V1004CT-L6 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 60ns Samsung Electronic
9828 KM416V1004CTL-45 1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=3.3V, self-refresh Samsung Electronic
9829 KM416V1004CTL-50 1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=3.3V, self-refresh Samsung Electronic
9830 KM416V1004CTL-60 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=3.3V, self-refresh Samsung Electronic
9831 KM416V1200B 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode Samsung Electronic
9832 KM416V1200BJ-5 1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 50ns Samsung Electronic
9833 KM416V1200BJ-6 1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns Samsung Electronic
9834 KM416V1200BJ-7 1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 70ns Samsung Electronic
9835 KM416V1200BJL-5 1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 50ns Samsung Electronic
9836 KM416V1200BJL-6 1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns Samsung Electronic
9837 KM416V1200BJL-7 1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 70ns Samsung Electronic
9838 KM416V1200BT-5 1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 50ns Samsung Electronic
9839 KM416V1200BT-6 1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns Samsung Electronic
9840 KM416V1200BT-7 1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 70ns Samsung Electronic


Datasheets found :: 14624
Page: | 324 | 325 | 326 | 327 | 328 | 329 | 330 | 331 | 332 |



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