DatasheetCatalog
  |   Home   |   All manufacturers   |   By Category   |  
FR DE ES IT PT RU

   
Quick jump to: 1N 2N 2SA 2SC 74 AD BA BC BD BF BU CXA HCF IRF KA KIA LA LM MC NE ST STK TDA TL UA
LM317 LM339 MAX232 NE555 LM324 8051 7805 2N3055 LM358 2N2222 74LS138 TDA7294 TL431 IRF540 1N4148

Datasheets for AMS

Datasheets found :: 14624
Page: | 326 | 327 | 328 | 329 | 330 | 331 | 332 | 333 | 334 |
No. Part Name Description Manufacturer
9871 KM416V1204CJ-60 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=3.3V, refresh period=16ms Samsung Electronic
9872 KM416V1204CJ-L5 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 50ns Samsung Electronic
9873 KM416V1204CJ-L6 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 60ns Samsung Electronic
9874 KM416V1204CJL-45 1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=3.3V, self-refresh Samsung Electronic
9875 KM416V1204CJL-50 1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=3.3V, self-refresh Samsung Electronic
9876 KM416V1204CJL-60 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=3.3V, self-refresh Samsung Electronic
9877 KM416V1204CT-45 1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=3.3V, refresh period=16ms Samsung Electronic
9878 KM416V1204CT-5 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 50ns Samsung Electronic
9879 KM416V1204CT-50 1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=3.3V, refresh period=16ms Samsung Electronic
9880 KM416V1204CT-6 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 60ns Samsung Electronic
9881 KM416V1204CT-60 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=3.3V, refresh period=16ms Samsung Electronic
9882 KM416V1204CT-L5 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 50ns Samsung Electronic
9883 KM416V1204CT-L6 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 60ns Samsung Electronic
9884 KM416V1204CTL-45 1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=3.3V, self-refresh Samsung Electronic
9885 KM416V1204CTL-50 1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=3.3V, self-refresh Samsung Electronic
9886 KM416V1204CTL-60 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=3.3V, self-refresh Samsung Electronic
9887 KM416V254D 256K x 16Bit CMOS Dynamic RAM with Extended Data Out Samsung Electronic
9888 KM416V254DJ-5 256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 50ns, 8ms refresh period Samsung Electronic
9889 KM416V254DJ-6 256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 60ns, 8ms refresh period Samsung Electronic
9890 KM416V254DJ-7 256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 70ns, 8ms refresh period Samsung Electronic
9891 KM416V254DJL-5 256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 50ns, self-refresh Samsung Electronic
9892 KM416V254DJL-6 256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 60ns, self-refresh Samsung Electronic
9893 KM416V254DJL-7 256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 70ns, self-refresh Samsung Electronic
9894 KM416V254DT-5 256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 50ns, 8ms refresh period Samsung Electronic
9895 KM416V254DT-6 256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 60ns, 8ms refresh period Samsung Electronic
9896 KM416V254DT-7 256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 70ns, 8ms refresh period Samsung Electronic
9897 KM416V254DTL-5 256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 50ns, self-refresh Samsung Electronic
9898 KM416V254DTL-6 256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 60ns, self-refresh Samsung Electronic
9899 KM416V254DTL-7 256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 70ns, self-refresh Samsung Electronic
9900 KM416V256D 256K x 16Bit CMOS Dynamic RAM with Fast Page Mode Samsung Electronic


Datasheets found :: 14624
Page: | 326 | 327 | 328 | 329 | 330 | 331 | 332 | 333 | 334 |



© 2024 - www Datasheet Catalog com