No. |
Part Name |
Description |
Manufacturer |
991 |
2N5109 |
Epitaxial planar NPN transistor, designed for CATV-MATV amplifier applications over a wide frequency range (40 to 860MHz) |
SGS-ATES |
992 |
2N5109A |
Silicon NPN Epitaxial-Planar HF Transistor |
IPRS Baneasa |
993 |
2N5109B |
Silicon NPN Epitaxial-Planar HF Transistor |
IPRS Baneasa |
994 |
2N5179 |
Silicon NPN Epitaxial Planar RF Transistor for UHF Applications in Military Communications and Industrial Equipment |
RCA Solid State |
995 |
2N5179 |
Epitaxial planar NPN transistor intended for low-noise tuned-amplifier and converter applications up to 500MHz |
SGS-ATES |
996 |
2N5180 |
Silicon NPN Epitaxial Planar RF Transistor |
RCA Solid State |
997 |
2N5190 |
NPN Epitaxial Power Transistor |
National Semiconductor |
998 |
2N5190 |
Silicon epitaxial-base NPN medium power transistor |
SGS-ATES |
999 |
2N5190 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
1000 |
2N5191 |
NPN Epitaxial Power Transistor |
National Semiconductor |
1001 |
2N5191 |
Silicon epitaxial-base NPN medium power transistor |
SGS-ATES |
1002 |
2N5191 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
1003 |
2N5192 |
Silicon epitaxial-base NPN medium power transistor |
SGS-ATES |
1004 |
2N5192 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
1005 |
2N5193 |
Silicon epitaxial-base PNP medium power transistor in Jedec TO-126 plastic package |
SGS-ATES |
1006 |
2N5193 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
1007 |
2N5194 |
Silicon epitaxial-base PNP medium power transistor in Jedec TO-126 plastic package |
SGS-ATES |
1008 |
2N5194 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
1009 |
2N5195 |
Silicon epitaxial-base PNP medium power transistor in Jedec TO-126 plastic package |
SGS-ATES |
1010 |
2N5195 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
1011 |
2N5202 |
HIGH SPEED EPITAXIAL COLLECTOR SILICON NPN PLANAR TRANSISTORS |
General Electric Solid State |
1012 |
2N5209 |
NPN Epitaxial Silicon Transistor |
Samsung Electronic |
1013 |
2N5210 |
NPN EPITAXIAL SILICON TRANSISTOR |
Samsung Electronic |
1014 |
2N5232 |
Planar epitaxial passivated NPN silicon transistor. 50V, 100mA. |
General Electric Solid State |
1015 |
2N5232A |
Planar epitaxial passivated NPN silicon transistor. 50V, 100mA. |
General Electric Solid State |
1016 |
2N5249 |
Planar epitaxial passivated NPN silicon transistor. 50V, 100mA. |
General Electric Solid State |
1017 |
2N5249A |
Planar epitaxial passivated NPN silicon transistor. 50V, 100mA. |
General Electric Solid State |
1018 |
2N5306 |
Planar epitaxial passivated NPN silicon Darlington transistor. 25V, 300mA. |
General Electric Solid State |
1019 |
2N5307 |
Planar epitaxial passivated NPN silicon Darlington transistor. 40V, 300mA. |
General Electric Solid State |
1020 |
2N5308 |
Planar epitaxial passivated NPN silicon Darlington transistor. 40V, 300mA. |
General Electric Solid State |
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