| No. |
Part Name |
Description |
Manufacturer |
| 1081 |
2N5829 |
Silicon PNP Epitaxial Planar HF Transistor |
IPRS Baneasa |
| 1082 |
2N5875 |
Silicon epitaxial-base PNP power transistor |
SGS-ATES |
| 1083 |
2N5875 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 1084 |
2N5876 |
Silicon epitaxial-base PNP power transistor |
SGS-ATES |
| 1085 |
2N5876 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 1086 |
2N5877 |
Silicon epitaxial-base NPN power transistor |
SGS-ATES |
| 1087 |
2N5877 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 1088 |
2N5878 |
Silicon epitaxial-base NPN power transistor |
SGS-ATES |
| 1089 |
2N5878 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 1090 |
2N6032 |
Silicon multiepitaxial planar NPN transistor in modified Jedec TO-3 metal case |
SGS-ATES |
| 1091 |
2N6033 |
Silicon multiepitaxial planar NPN transistor in modified Jedec TO-3 metal case |
SGS-ATES |
| 1092 |
2N6034 |
Silicon epitaxial-base PNP medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 1093 |
2N6034 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
| 1094 |
2N6035 |
Silicon epitaxial-base PNP medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 1095 |
2N6035 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
| 1096 |
2N6036 |
Silicon epitaxial-base PNP medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 1097 |
2N6036 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
| 1098 |
2N6037 |
Silicon epitaxial-base NPN medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 1099 |
2N6037 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
| 1100 |
2N6038 |
Silicon epitaxial-base NPN medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 1101 |
2N6038 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
| 1102 |
2N6039 |
Silicon epitaxial-base NPN medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 1103 |
2N6039 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
| 1104 |
2N6050 |
Silicon epitaxial-base PNP power transistors in monolithic Darlington configuration |
SGS-ATES |
| 1105 |
2N6050 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
| 1106 |
2N6051 |
Silicon epitaxial-base PNP power transistors in monolithic Darlington configuration |
SGS-ATES |
| 1107 |
2N6051 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
| 1108 |
2N6052 |
Silicon epitaxial-base PNP power transistors in monolithic Darlington configuration |
SGS-ATES |
| 1109 |
2N6052 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
| 1110 |
2N6053 |
Silicon epitaxial-base PNP power transistors in monolithic Darlington configuration |
SGS-ATES |
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