No. |
Part Name |
Description |
Manufacturer |
1141 |
2N6108 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -60V. |
General Electric Solid State |
1142 |
2N6109 |
EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS |
Boca Semiconductor Corporation |
1143 |
2N6109 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -60V. |
General Electric Solid State |
1144 |
2N6109 |
PNP Power transistor Epitaxial-Base - LF amplifier and switching, complementary 2N5492 |
SESCOSEM |
1145 |
2N6109 |
Epitaxial-base silicon PNP transistor in Jedec TO-220 plastic package |
SGS-ATES |
1146 |
2N6110 |
EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS |
Boca Semiconductor Corporation |
1147 |
2N6110 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -40V. |
General Electric Solid State |
1148 |
2N6111 |
EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS |
Boca Semiconductor Corporation |
1149 |
2N6111 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -40V. |
General Electric Solid State |
1150 |
2N6111 |
PNP Power transistor Epitaxial-Base - LF amplifier and switching, complementary 2N5494 |
SESCOSEM |
1151 |
2N6111 |
Epitaxial-base silicon PNP transistor in Jedec TO-220 plastic package |
SGS-ATES |
1152 |
2N6121 |
Epitaxial-base, silicon N-P-N VERSAWATT transistor. 45V. |
General Electric Solid State |
1153 |
2N6121 |
Silicon epitaxial-base NPN medium power transistor |
SGS-ATES |
1154 |
2N6121 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
1155 |
2N6122 |
Epitaxial-base, silicon N-P-N VERSAWATT transistor. 60V. |
General Electric Solid State |
1156 |
2N6122 |
Silicon epitaxial-base NPN medium power transistor |
SGS-ATES |
1157 |
2N6122 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
1158 |
2N6123 |
Epitaxial-base, silicon N-P-N VERSAWATT transistor. 80V. |
General Electric Solid State |
1159 |
2N6123 |
Silicon epitaxial-base NPN medium power transistor |
SGS-ATES |
1160 |
2N6123 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
1161 |
2N6124 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -45V. |
General Electric Solid State |
1162 |
2N6124 |
Silicon epitaxial-base PNP medium power transistor |
SGS-ATES |
1163 |
2N6124 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
1164 |
2N6125 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -60V. |
General Electric Solid State |
1165 |
2N6125 |
Silicon epitaxial-base PNP medium power transistor |
SGS-ATES |
1166 |
2N6125 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
1167 |
2N6126 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -80V. |
General Electric Solid State |
1168 |
2N6126 |
Silicon epitaxial-base PNP medium power transistor |
SGS-ATES |
1169 |
2N6126 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
1170 |
2N6246 |
Epitaxial-base, silicon P-N-P high-power transistor. -70V, 125W. |
General Electric Solid State |
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