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Datasheets for TAX

Datasheets found :: 14842
Page: | 36 | 37 | 38 | 39 | 40 | 41 | 42 | 43 | 44 |
No. Part Name Description Manufacturer
1171 2N6247 Epitaxial-base, silicon P-N-P high-power transistor. -90V, 125W. General Electric Solid State
1172 2N6248 Epitaxial-base, silicon P-N-P high-power transistor. -110V, 125W. General Electric Solid State
1173 2N6261 HOMETAXIAL-BASE MEDIUM POWER SILICON NPN TRANSISTOR SemeLAB
1174 2N6288 EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS Boca Semiconductor Corporation
1175 2N6288 Epitaxial-base, silicon N-P-N VERSAWATT transistor. 40V. General Electric Solid State
1176 2N6288 Epitaxial-base silicon NPN transistor in Jedec TO-220 plastic package SGS-ATES
1177 2N6289 EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS Boca Semiconductor Corporation
1178 2N6289 Epitaxial-base, silicon N-P-N VERSAWATT transistor. 40V. General Electric Solid State
1179 2N6290 EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS Boca Semiconductor Corporation
1180 2N6290 Epitaxial-base, silicon N-P-N VERSAWATT transistor. 60V. General Electric Solid State
1181 2N6290 Epitaxial-base silicon NPN transistor in Jedec TO-220 plastic package SGS-ATES
1182 2N6291 EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS Boca Semiconductor Corporation
1183 2N6291 Epitaxial-base, silicon N-P-N VERSAWATT transistor. 60V. General Electric Solid State
1184 2N6292 EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS Boca Semiconductor Corporation
1185 2N6292 Epitaxial-base, silicon N-P-N VERSAWATT transistor. 80V. General Electric Solid State
1186 2N6292 Epitaxial-base silicon NPN transistor in Jedec TO-220 plastic package SGS-ATES
1187 2N6293 EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS Boca Semiconductor Corporation
1188 2N6293 Epitaxial-base, silicon N-P-N VERSAWATT transistor. 80V. General Electric Solid State
1189 2N6303 Silicon epitaxial planar PNP transistor in Jedec TO-39 metal case SGS-ATES
1190 2N6354 Silicon planar multiepitaxial NPN transistor SGS-ATES
1191 2N6386 Silicon epitaxial-base NPN power transistor in monolithic Darlington configuration SGS-ATES
1192 2N6387 Silicon epitaxial-base NPN power transistor in monolithic Darlington configuration SGS-ATES
1193 2N6388 Silicon epitaxial-base NPN power transistor in monolithic Darlington configuration SGS-ATES
1194 2N6427 NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR Samsung Electronic
1195 2N6428 NPN EPITAXIAL SILICON TRANSISTOR Samsung Electronic
1196 2N6428A NPN EPITAXIAL SILICON TRANSISTOR Samsung Electronic
1197 2N6469 Epitaxial-base, silicon P-N-P high-power transistor. -50V, 125W. General Electric Solid State
1198 2N6473 EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS Boca Semiconductor Corporation
1199 2N6473 Epitaxial-base, silicon N-P-N VERSAWATT transistor. 110V. General Electric Solid State
1200 2N6474 130 V, epitaxial-base NPN selicon versawatt transistor Boca Semiconductor Corporation


Datasheets found :: 14842
Page: | 36 | 37 | 38 | 39 | 40 | 41 | 42 | 43 | 44 |



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