No. |
Part Name |
Description |
Manufacturer |
61 |
IRF231 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
62 |
IRF231R |
Trans MOSFET N-CH 150V 9A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
63 |
IRF232 |
N-Channel Power MOSFETs/ 12A/ 150-200 V |
Fairchild Semiconductor |
64 |
IRF232 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 8.0A. |
General Electric Solid State |
65 |
IRF232 |
8.0A and 9.0A/ 150V and 200V/ 0.4 and 0.6 Ohm/ N-Channel Power MOSFETs |
Intersil |
66 |
IRF232 |
Trans MOSFET N-CH 200V 7.3A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
67 |
IRF232 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
68 |
IRF232R |
Trans MOSFET N-CH 200V 7.3A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
69 |
IRF233 |
N-Channel Power MOSFETs/ 12A/ 150-200 V |
Fairchild Semiconductor |
70 |
IRF233 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 8.0A. |
General Electric Solid State |
71 |
IRF233 |
8.0A and 9.0A/ 150V and 200V/ 0.4 and 0.6 Ohm/ N-Channel Power MOSFETs |
Intersil |
72 |
IRF233 |
Trans MOSFET N-CH 150V 7.3A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
73 |
IRF233 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
74 |
IRF234 |
8.1A and 6.5A/ 275V and 250V/ 0.45 and 0.68 Ohm/ N-Channel Power MOSFETs |
Intersil |
75 |
IRF235 |
8.1A and 6.5A/ 275V and 250V/ 0.45 and 0.68 Ohm/ N-Channel Power MOSFETs |
Intersil |
76 |
IRF236 |
8.1A and 6.5A/ 275V and 250V/ 0.45 and 0.68 Ohm/ N-Channel Power MOSFETs |
Intersil |
77 |
IRF237 |
8.1A and 6.5A/ 275V and 250V/ 0.45 and 0.68 Ohm/ N-Channel Power MOSFETs |
Intersil |
78 |
IRF240 |
N-Channel Power MOSFETs/ 18A/ 150-200V |
Fairchild Semiconductor |
79 |
IRF240 |
200V Single N-Channel Hi-Rel MOSFET in a TO-204AE package |
International Rectifier |
80 |
IRF240 |
18A/ 200V/ 0.180 Ohm/ N-Channel Power MOSFET |
Intersil |
81 |
IRF240 |
Trans MOSFET N-CH 200V 18A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
82 |
IRF240 |
N-CHANNEL POWER MOSFET |
Samsung Electronic |
83 |
IRF240 |
N-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS |
SemeLAB |
84 |
IRF240-243 |
N-Channel Power MOSFETs/ 18A/ 150-200V |
Fairchild Semiconductor |
85 |
IRF240SMD |
N.CHANNEL POWER MOSFET |
SemeLAB |
86 |
IRF241 |
N-Channel Power MOSFETs/ 18A/ 150-200V |
Fairchild Semiconductor |
87 |
IRF241 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 18A. |
General Electric Solid State |
88 |
IRF241 |
16A and 18A, 200V and 150V, 0.18 and 0.22 Ohm, N-Channel Power MOSFETs |
Intersil |
89 |
IRF241 |
N-CHANNEL POWER MOSFET |
Samsung Electronic |
90 |
IRF242 |
N-Channel Power MOSFETs/ 18A/ 150-200V |
Fairchild Semiconductor |
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