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Datasheets for 350V

Datasheets found :: 238
Page: | 1 | 2 | 3 | 4 | 5 |
No. Part Name Description Manufacturer
1 15046-ECG Surge arrester (gas filled). Nominal breakdown voltage 350VDC NTE Electronics
2 1N2024 Diode 350V 40A 2-Pin DO-5 New Jersey Semiconductor
3 1N2069 Diode 350V 275A 2-Pin DO-9 New Jersey Semiconductor
4 1N2069A Diode 350V 275A 2-Pin DO-9 New Jersey Semiconductor
5 1N2134 Silicon rectifier 60A 350V Transitron Electronic
6 1N2799 Rectifier Diode 350V 5A Motorola
7 1N2799 Diode 350V 40A 2-Pin DO-5 New Jersey Semiconductor
8 1N3167 Diode Switching 350V 240A 2-Pin DO-9 New Jersey Semiconductor
9 1N3266 Rectifier Diode 350V 160A Motorola
10 1N3266 Diode 350V 275A 2-Pin DO-9 New Jersey Semiconductor
11 2N3439 1.000W General Purpose NPN Metal Can Transistor. 350V Vceo, 1.000A Ic, 40 - 160 hFE. Continental Device India Limited
12 2N3439 Trans GP BJT NPN 350V 1A 3-Pin TO-39 Box New Jersey Semiconductor
13 2N343A Trans GP BJT NPN 350V 1A 3-Pin TO-5 New Jersey Semiconductor
14 2N343B Trans GP BJT NPN 350V 1A 3-Pin TO-5 New Jersey Semiconductor
15 2N343C Trans GP BJT NPN 350V 1A 3-Pin TO-5 New Jersey Semiconductor
16 2N4298 Trans GP BJT NPN 350V 1A New Jersey Semiconductor
17 2N4299 Trans GP BJT NPN 350V 1A New Jersey Semiconductor
18 2N5657 Trans GP BJT NPN 350V 1A 3-Pin TO-126 Box New Jersey Semiconductor
19 2N5657 Power 1A 350V NPN ON Semiconductor
20 2N6079 Trans GP BJT NPN 350V 7A 3-Pin(2+Tab) TO-66 New Jersey Semiconductor
21 2N6213 Trans GP BJT PNP 350V 5A 3-Pin(2+Tab) TO-66 Sleeve New Jersey Semiconductor
22 2N6251 Trans GP BJT NPN 350V 10A 3-Pin(2+Tab) TO-3 Sleeve New Jersey Semiconductor
23 2N6493 Trans GP BJT NPN 350V 5A 3-Pin(3+Tab) TO-220 New Jersey Semiconductor
24 2N6494 Trans GP BJT NPN 350V 5A 3-Pin(3+Tab) TO-220 New Jersey Semiconductor
25 2N6499 Trans GP BJT NPN 350V 5A 3-Pin(3+Tab) TO-220 New Jersey Semiconductor
26 2N650 Trans GP BJT NPN 350V 0.5A 3-Pin TO-92 New Jersey Semiconductor
27 2N6513 Trans GP BJT NPN 350V 7A 3-Pin(2+Tab) TO-3 New Jersey Semiconductor
28 2N6517 0.625W General Purpose NPN Plastic Leaded Transistor. 350V Vceo, 0.500A Ic, 20 - hFE Continental Device India Limited
29 2N6517 High voltage transistor. Collector-emitter voltage: Vceo = 350V. Collector-base voltage: Vcbo = 350V. Collector dissipation: Pc(max) = 625mW. USHA India LTD
30 2N6517 High voltage transistor. Collector-emitter voltage: Vceo = 350V. Collector-base voltage: Vcbo = 350V. Collector dissipation: Pc(max) = 625mW. USHA India LTD


Datasheets found :: 238
Page: | 1 | 2 | 3 | 4 | 5 |



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