No. |
Part Name |
Description |
Manufacturer |
121 |
IRF343 |
MOSPOWER N-Channel Enhancement Mode Transistor 350V 8A |
Siliconix |
122 |
IRF350 |
N-Channel Power MOSFETs/ 15A/ 350V/400V |
Fairchild Semiconductor |
123 |
IRF350-353 |
N-Channel Power MOSFETs/ 15A/ 350V/400V |
Fairchild Semiconductor |
124 |
IRF351 |
N-Channel Power MOSFETs/ 15A/ 350V/400V |
Fairchild Semiconductor |
125 |
IRF351 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 15A. |
General Electric Solid State |
126 |
IRF351 |
Trans MOSFET N-CH 350V 13A 3-Pin(2+Tab) TO-204AA |
New Jersey Semiconductor |
127 |
IRF351 |
MOSPOWER N-Channel Enhancement Mode Transistor 350V 15A |
Siliconix |
128 |
IRF352 |
N-Channel Power MOSFETs/ 15A/ 350V/400V |
Fairchild Semiconductor |
129 |
IRF353 |
N-Channel Power MOSFETs/ 15A/ 350V/400V |
Fairchild Semiconductor |
130 |
IRF353 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 13A. |
General Electric Solid State |
131 |
IRF353 |
Trans MOSFET N-CH 350V 12A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
132 |
IRF353 |
MOSPOWER N-Channel Enhancement Mode Transistor 350V 13A |
Siliconix |
133 |
IRF711 |
MOSPOWER N-Channel Enhancement Mode Transistor 350V 1.5A |
Siliconix |
134 |
IRF713 |
MOSPOWER N-Channel Enhancement Mode Transistor 350V 1.5A |
Siliconix |
135 |
IRF721 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 3.0A. |
General Electric Solid State |
136 |
IRF721 |
Trans MOSFET N-CH 350V 3.3A 3-Pin(3+Tab) TO-220 |
New Jersey Semiconductor |
137 |
IRF721 |
N-channel MOSFET, 350V, 3.3A |
SGS Thomson Microelectronics |
138 |
IRF721 |
MOSPOWER N-Channel Enhancement Mode Transistor 350V 3A |
Siliconix |
139 |
IRF721F1 |
N-channel MOSFET, 350V, 2.5A |
SGS Thomson Microelectronics |
140 |
IRF723 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 2.5A. |
General Electric Solid State |
141 |
IRF723 |
Trans MOSFET N-CH 350V 2.8A 3-Pin(3+Tab) TO-220 |
New Jersey Semiconductor |
142 |
IRF723 |
N-channel MOSFET, 350V, 2.8A |
SGS Thomson Microelectronics |
143 |
IRF723 |
MOSPOWER N-Channel Enhancement Mode Transistor 350V 2.5A |
Siliconix |
144 |
IRF723F1 |
N-channel MOSFET, 350V, 2A |
SGS Thomson Microelectronics |
145 |
IRF731 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 5.5A. |
General Electric Solid State |
146 |
IRF731 |
MOSPOWER N-Channel Enhancement Mode Transistor 350V 5.5A |
Siliconix |
147 |
IRF733 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 4.5A. |
General Electric Solid State |
148 |
IRF733 |
MOSPOWER N-Channel Enhancement Mode Transistor 350V 4.5A |
Siliconix |
149 |
IRF741 |
N-Channel Power MOSFETs/ 10A/ 350V/400V |
Fairchild Semiconductor |
150 |
IRF741 |
MOSPOWER N-Channel Enhancement Mode Transistor 350V 10A |
Siliconix |
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