No. |
Part Name |
Description |
Manufacturer |
61 |
AQV210AZ |
PhotoMOS relay, GU (general use) type, 1-channel (form A ) type. I/O isolation: standard 1,500 VAC. Output rating: load voltage 350V, load current 130 mA. Tape and reel packing style, picked from the 4/5/6-pin side. |
Matsushita Electric Works(Nais) |
62 |
AQV210EAX |
PhotoMOS relay, GU (general use) E-type, 1-channel (form A ) type. I/O isolation: standard 1,500 VAC. Output rating: load voltage 350V, load current 130 mA. Tape and reel packing style, picked from the 1/2/3-pin side. |
Matsushita Electric Works(Nais) |
63 |
AQV210EHAX |
PhotoMOS relay, GU (general use) E-type, 1-channel (form A ) type. I/O isolation: reinforced 5,000 VAC. Output rating: load voltage 350V, load current 130 mA. Tape and reel packing style, picked from the 1/2/3-pin side. |
Matsushita Electric Works(Nais) |
64 |
AQV210HL |
PhotoMOS relay, GU (general use) type, 1-channel (form A ), current limit function. Output rating: load voltage 350V, load current 130 mA. Tube packing style. |
Matsushita Electric Works(Nais) |
65 |
AQV210HLA |
PhotoMOS relay, GU (general use) type, 1-channel (form A ), current limit function. Output rating: load voltage 350V, load current 130 mA. Tube packing style. |
Matsushita Electric Works(Nais) |
66 |
AQV210HLAX |
PhotoMOS relay, GU (general use) type, 1-channel (form A ), current limit function. Output rating: load voltage 350V, load current 130 mA. Tape and reel packing style, picked from the 1/2/3-pin side. |
Matsushita Electric Works(Nais) |
67 |
AQV210HLAZ |
PhotoMOS relay, GU (general use) type, 1-channel (form A ), current limit function. Output rating: load voltage 350V, load current 130 mA. Tape and reel packing style, picked from the 4/5/6-pin side. |
Matsushita Electric Works(Nais) |
68 |
BD159 |
20.000W Power NPN Plastic Leaded Transistor. 350V Vceo, 0.500A Ic, 30 - 240 hFE. |
Continental Device India Limited |
69 |
BDY47 |
Trans GP BJT NPN 350V 15A |
New Jersey Semiconductor |
70 |
BF496 |
Trans GP BJT PNP 350V 0.5A 3-Pin TO-92 Bulk |
New Jersey Semiconductor |
71 |
BU323 |
16A peak NPN silicon power darlington transistor 175W 350V |
Motorola |
72 |
BU921ZP |
NPN power transistor for automotive ignition applications, 350V, 16A |
SGS Thomson Microelectronics |
73 |
BU921ZPFI |
NPN power transistor for automotive ignition applications, 350V, 16A |
SGS Thomson Microelectronics |
74 |
BU921ZT |
NPN power transistor for automotive ignition applications, 350V, 16A |
SGS Thomson Microelectronics |
75 |
BU921ZTFI |
NPN power transistor for automotive ignition applications, 350V, 16A |
SGS Thomson Microelectronics |
76 |
BUY79 |
Trans GP BJT NPN 350V 8A |
New Jersey Semiconductor |
77 |
CM2P-350L |
Gastube arrester, 350V |
SEMITEC |
78 |
CM3P-350L |
Gastube arrester, 350V |
SEMITEC |
79 |
CMBT6517 |
0.225W General Purpose NPN SMD Transistor. 350V Vceo, 0.500A Ic, 15 hFE. Complementary CMBT6520 |
Continental Device India Limited |
80 |
CMBT6520 |
0.225W General Purpose PNP SMD Transistor. 350V Vceo, 0.500A Ic, 20 hFE. Complementary CMBT6517 |
Continental Device India Limited |
81 |
DTZ350 |
V(br): 350V; P(pulse): 1.5 kW; P: 5W; I(fsm): 250A; bidirectional transient voltage suppressor |
SGS Thomson Microelectronics |
82 |
DTZ350A |
V(br): 350V; P(pulse): 1.5 kW; P: 5W; I(fsm): 250A; bidirectional transient voltage suppressor |
SGS Thomson Microelectronics |
83 |
ESM16A |
10A NPN silicon power metal transistor 350V 150W SWITCHMODE series |
Motorola |
84 |
FFA40UP35S |
40A, 350V, Ultrafast Diode |
Fairchild Semiconductor |
85 |
GTA-350D |
Gastube arrester, 350V |
SEMITEC |
86 |
GTA3P-350 |
Gastube arrester, 350V |
SEMITEC |
87 |
HGT1S20N35G3VL |
20A/ 350V N-Channel/ Logic Level/ Voltage Clamping IGBTs |
Fairchild Semiconductor |
88 |
HGT1S20N35G3VL |
20A/ 350V N-Channel/ Logic Level/ Voltage Clamping IGBTs |
Intersil |
89 |
HGT1S20N35G3VLS |
20A, 350V N-Channel, Logic Level, Voltage Clamping IGBTs |
Fairchild Semiconductor |
90 |
HGT1S20N35G3VLS |
20A/ 350V N-Channel/ Logic Level/ Voltage Clamping IGBTs |
Intersil |
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