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Datasheets for 350V

Datasheets found :: 245
Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 |
No. Part Name Description Manufacturer
61 AQV210AZ PhotoMOS relay, GU (general use) type, 1-channel (form A ) type. I/O isolation: standard 1,500 VAC. Output rating: load voltage 350V, load current 130 mA. Tape and reel packing style, picked from the 4/5/6-pin side. Matsushita Electric Works(Nais)
62 AQV210EAX PhotoMOS relay, GU (general use) E-type, 1-channel (form A ) type. I/O isolation: standard 1,500 VAC. Output rating: load voltage 350V, load current 130 mA. Tape and reel packing style, picked from the 1/2/3-pin side. Matsushita Electric Works(Nais)
63 AQV210EHAX PhotoMOS relay, GU (general use) E-type, 1-channel (form A ) type. I/O isolation: reinforced 5,000 VAC. Output rating: load voltage 350V, load current 130 mA. Tape and reel packing style, picked from the 1/2/3-pin side. Matsushita Electric Works(Nais)
64 AQV210HL PhotoMOS relay, GU (general use) type, 1-channel (form A ), current limit function. Output rating: load voltage 350V, load current 130 mA. Tube packing style. Matsushita Electric Works(Nais)
65 AQV210HLA PhotoMOS relay, GU (general use) type, 1-channel (form A ), current limit function. Output rating: load voltage 350V, load current 130 mA. Tube packing style. Matsushita Electric Works(Nais)
66 AQV210HLAX PhotoMOS relay, GU (general use) type, 1-channel (form A ), current limit function. Output rating: load voltage 350V, load current 130 mA. Tape and reel packing style, picked from the 1/2/3-pin side. Matsushita Electric Works(Nais)
67 AQV210HLAZ PhotoMOS relay, GU (general use) type, 1-channel (form A ), current limit function. Output rating: load voltage 350V, load current 130 mA. Tape and reel packing style, picked from the 4/5/6-pin side. Matsushita Electric Works(Nais)
68 BD159 20.000W Power NPN Plastic Leaded Transistor. 350V Vceo, 0.500A Ic, 30 - 240 hFE. Continental Device India Limited
69 BDY47 Trans GP BJT NPN 350V 15A New Jersey Semiconductor
70 BF496 Trans GP BJT PNP 350V 0.5A 3-Pin TO-92 Bulk New Jersey Semiconductor
71 BU323 16A peak NPN silicon power darlington transistor 175W 350V Motorola
72 BU921ZP NPN power transistor for automotive ignition applications, 350V, 16A SGS Thomson Microelectronics
73 BU921ZPFI NPN power transistor for automotive ignition applications, 350V, 16A SGS Thomson Microelectronics
74 BU921ZT NPN power transistor for automotive ignition applications, 350V, 16A SGS Thomson Microelectronics
75 BU921ZTFI NPN power transistor for automotive ignition applications, 350V, 16A SGS Thomson Microelectronics
76 BUY79 Trans GP BJT NPN 350V 8A New Jersey Semiconductor
77 CM2P-350L Gastube arrester, 350V SEMITEC
78 CM3P-350L Gastube arrester, 350V SEMITEC
79 CMBT6517 0.225W General Purpose NPN SMD Transistor. 350V Vceo, 0.500A Ic, 15 hFE. Complementary CMBT6520 Continental Device India Limited
80 CMBT6520 0.225W General Purpose PNP SMD Transistor. 350V Vceo, 0.500A Ic, 20 hFE. Complementary CMBT6517 Continental Device India Limited
81 DTZ350 V(br): 350V; P(pulse): 1.5 kW; P: 5W; I(fsm): 250A; bidirectional transient voltage suppressor SGS Thomson Microelectronics
82 DTZ350A V(br): 350V; P(pulse): 1.5 kW; P: 5W; I(fsm): 250A; bidirectional transient voltage suppressor SGS Thomson Microelectronics
83 ESM16A 10A NPN silicon power metal transistor 350V 150W SWITCHMODE series Motorola
84 FFA40UP35S 40A, 350V, Ultrafast Diode Fairchild Semiconductor
85 GTA-350D Gastube arrester, 350V SEMITEC
86 GTA3P-350 Gastube arrester, 350V SEMITEC
87 HGT1S20N35G3VL 20A/ 350V N-Channel/ Logic Level/ Voltage Clamping IGBTs Fairchild Semiconductor
88 HGT1S20N35G3VL 20A/ 350V N-Channel/ Logic Level/ Voltage Clamping IGBTs Intersil
89 HGT1S20N35G3VLS 20A, 350V N-Channel, Logic Level, Voltage Clamping IGBTs Fairchild Semiconductor
90 HGT1S20N35G3VLS 20A/ 350V N-Channel/ Logic Level/ Voltage Clamping IGBTs Intersil


Datasheets found :: 245
Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 |



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