| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1N110 |
Germanium Diode Microwave Mixer - to 1,000MHz, NF=10dB |
Motorola |
| 2 |
1N5149 |
Silicon high-frequency step-recovery power varactor for 100MHz to 2.0 GHz harmonic-generation applications, output power to 25W al 1GHz |
Motorola |
| 3 |
1N5150 |
Silicon high-frequency step-recovery power varactor for 100MHz to 2.0 GHz harmonic-generation applications, output power to 25W al 1GHz |
Motorola |
| 4 |
2N2857 |
Epitaxial planar NPN transistor intended for amplifier, oscillator and converter applications up to 500MHz |
SGS-ATES |
| 5 |
2N2947 |
NPN silicon annular transistor for power amplifier applications to 100MHz |
Motorola |
| 6 |
2N2948 |
NPN silicon annular transistor for power amplifier applications to 100MHz |
Motorola |
| 7 |
2N2949 |
NPN silicon annular transistors for power amplifier and driver applications to 100MHz, TO-107 case |
Motorola |
| 8 |
2N2950 |
NPN silicon annular transistors for power amplifier and driver applications to 100MHz, TO-102 case |
Motorola |
| 9 |
2N3375 |
NPN silicon RF Power transistor, optimized for large-signal power amplifier and driver applications to 400MHz |
Motorola |
| 10 |
2N3553 |
NPN silicon RF Power transistor, optimized for large-signal power amplifier and driver applications to 400MHz |
Motorola |
| 11 |
2N3632 |
NPN silicon RF Power transistor, optimized for large-signal power amplifier and driver applications to 400MHz |
Motorola |
| 12 |
2N3664 |
NPN silicon transistor for power amplifier and driver applications to 500MHz |
Motorola |
| 13 |
2N3839 |
Epitaxial planar NPN transistor intended for amplifier, oscillator and converter applications up to 500MHz, low noise |
SGS-ATES |
| 14 |
2N3866 |
NPN silicon high frequency transistor 1.0W - 400MHz |
Motorola |
| 15 |
2N3866A |
NPN silicon high frequency transistor 1.0W - 400MHz |
Motorola |
| 16 |
2N3904-T18 |
40V Vce, 0.2A Ic, 300MHz NPN bipolar transistor |
SemeLAB |
| 17 |
2N3948 |
NPN silicon high frequency transistor 1.0W - 400MHz |
Motorola |
| 18 |
2N3961 |
NPN silicon RF Power transistor, optimized for large-signal power amplifier and driver applications to 400MHz |
Motorola |
| 19 |
2N4428 |
NPN silicon RF power transistor 0.75W - 500MHz |
Motorola |
| 20 |
2N5031 |
NPN silicon high frequency transistor 2.5dB - 450MHz |
Motorola |
| 21 |
2N5032 |
NPN silicon high frequency transistor 3.0dB - 450MHz |
Motorola |
| 22 |
2N5109 |
Epitaxial planar NPN transistor, designed for CATV-MATV amplifier applications over a wide frequency range (40 to 860MHz) |
SGS-ATES |
| 23 |
2N5179 |
NPN silicon RF high frequency transistor 4.5dB - 200MHz |
Motorola |
| 24 |
2N5179 |
Epitaxial planar NPN transistor intended for low-noise tuned-amplifier and converter applications up to 500MHz |
SGS-ATES |
| 25 |
2N5681SMD |
100V Vce, 1A Ic, 30MHz NPN bipolar transistor |
SemeLAB |
| 26 |
2N5849 |
NPN silicon RF power transistor 40W - 50MHz |
Motorola |
| 27 |
2N5944 |
NPN silicon RF power transistor 2.0W - 470MHz |
Motorola |
| 28 |
2N5945 |
NPN silicon RF power transistor 4.0W - 470MHz |
Motorola |
| 29 |
2N5946 |
NPN silicon RF power transistor 10W - 470MHz |
Motorola |
| 30 |
2N6166 |
NPN silicon RF power transistor 100 WATTS - 150MHz |
Motorola |
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