No. |
Part Name |
Description |
Manufacturer |
61 |
2N6105 |
30W 400MHz Broadband Emitter-Ballasted Silicon NPN Overlay Transistor |
RCA Solid State |
62 |
2N6136 |
NPN silicon RF power transistor 25W - 470MHz designed for 12.5V |
Motorola |
63 |
2N6166 |
NPN silicon RF power transistor 100 WATTS - 150MHz |
Motorola |
64 |
2N6256 |
NPN silicon RF Power transistor 0.5W 470MHz 12.5V |
Motorola |
65 |
2N6366 |
NPN silicon RF power transistor 2.5W (PEP) 30MHz |
Motorola |
66 |
2N6367 |
NPN silicon RF power transistor 9W (PEP) 12.5V, up to 30MHz |
Motorola |
67 |
2N6368 |
NPN silicon RF power transistor 40W (PEP) 30MHz |
Motorola |
68 |
2N6370 |
NPN silicon RF power transistor 10W (PEP) 30MHz |
Motorola |
69 |
2N6439 |
Application Note - A 60W 225-400MHz amplifier |
Motorola |
70 |
2N6439 |
Controlled Q broadband NPN silicon RF power transistor 60W - 225-400MHz |
Motorola |
71 |
2N6985 |
125W 30 to 400MHz controlled Q broadband push-pull RF Power Transistor NPN silicon |
Motorola |
72 |
2N6986 |
100W 30 to 500MHz controlled Q broadband push-pull RF Power Transistor NPN silicon |
Motorola |
73 |
2SA495 |
Silicon PNP epitaxial planar transistor for General Amplifier Applications fT=200MHz, complementary to 2SC372 |
TOSHIBA |
74 |
2SC1120 |
Silicon NPN epitaxial planar transistor 400MHz Land-Mobil Radio RF power amplifier applications (low supply voltage use) |
TOSHIBA |
75 |
2SC1121 |
Silicon NPN epitaxial planar transistor 400MHz Land-Mobil Radio RF power amplifier applications (low supply voltage use) |
TOSHIBA |
76 |
2SC1122A |
Silicon NPN epitaxial planar transistor 400MHz Land-Mobil Radio Output Stage applications (low supply voltage use) |
TOSHIBA |
77 |
2SC1196 |
Silicon NPN epitaxial planar transistor, 700MHz- Power amplifier applications |
TOSHIBA |
78 |
2SC1197 |
Silicon NPN epitaxial planar transistor, 700MHz-Power amplifier applications |
TOSHIBA |
79 |
2SC1198 |
Silicon NPN epitaxial planar transistor, 700MHz-Power amplifier applications |
TOSHIBA |
80 |
2SC1241 |
Silicon NPN epitaxial planar RF transistor, fT=400MHz |
TOSHIBA |
81 |
2SC1763 |
Silicon NPN epitaxial planar transistor 2-30MHz SSB linear 40W power, 28V supply voltage |
TOSHIBA |
82 |
2SC1764 |
Silicon NPN epitaxial planar transistor 2-30MHz SSB linear 80W power, 28V supply voltage |
TOSHIBA |
83 |
2SC2098 |
Silicon NPN epitaxial planar transistor, Citizen band and HAM band up to 50MHz RF power amplifier applications |
TOSHIBA |
84 |
2SC2099 |
TRANSISTOR (2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS) (LOW SUPPLY VOLTAGE USE) |
TOSHIBA |
85 |
2SC2290 |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS (LOW SUPPLY VOLTAGE USE) |
TOSHIBA |
86 |
2SC2395 |
TRANSISTOR (2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS)(LOW SUPPLY VOLTAGE USE) |
TOSHIBA |
87 |
2SC2510 |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS (28V SUPPLY VOLTAGE USE) |
TOSHIBA |
88 |
2SC2879 |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS (LOW SUPPLY VOLTAGE USE) |
TOSHIBA |
89 |
2SC3139 |
CLASS A, 860MHz 24V power transistor (This datasheet of NEL080120-28 is also the datasheet of 2SC3139, see the Electrical Characteristics table) |
NEC |
90 |
2SC3140 |
CLASS A, 860MHz 24V power transistor (This datasheet of NEL080220-28 is also the datasheet of 2SC3140, see the Electrical Characteristics table) |
NEC |
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