No. |
Part Name |
Description |
Manufacturer |
91 |
2SC3141 |
CLASS A, 860MHz 24V power transistor (This datasheet of NEL080525-28 is also the datasheet of 2SC3141, see the Electrical Characteristics table) |
NEC |
92 |
2SC3282A |
Class C, 800-960MHz 12V power transistor (This datasheet of NEM082081B-12 is also the datasheet of 2SC3282A, see the Electrical Characteristics table) |
NEC |
93 |
2SC3283A |
Class C, 800-960MHz 12V power transistor (This datasheet of NEM084081B-12 is also the datasheet of 2SC3283A, see the Electrical Characteristics table) |
NEC |
94 |
2SC3537 |
Class C, 900MHz 28V power transistor (This datasheet of NEM092081B-28 is also the datasheet of 2SC3537, see the Electrical Characteristics table) |
NEC |
95 |
2SC3538 |
Class C, 900MHz 28V power transistor (This datasheet of NEM094081B-28 is also the datasheet of 2SC3538, see the Electrical Characteristics table) |
NEC |
96 |
2SC3539 |
Class C, 900MHz 28V power transistor (This datasheet of NEM096081B-28 is also the datasheet of 2SC3539, see the Electrical Characteristics table) |
NEC |
97 |
2SC366G |
Silicon NPN epitaxial planar transistor fT=150MHz |
TOSHIBA |
98 |
2SC367G |
Silicon NPN epitaxial planar transistor fT=150MHz |
TOSHIBA |
99 |
2SC378 |
Silicon NPN planar transistor fT=150MHz |
TOSHIBA |
100 |
2SC3804 |
NPN epitaxial planar RF power transistor 13.5V designed for power amplifiers in the 800-900MHz band range |
Mitsubishi Electric Corporation |
101 |
2SC3814 |
Class C, 940MHz 7 volt power transistor (This datasheet of NE090101-07 is also the datasheet of 2SC3814, see the Electrical Characteristics table) |
NEC |
102 |
2SC3815 |
Class C, 940MHz 7 volt power transistor (This datasheet of NEM090301-07 is also the datasheet of 2SC3815, see the Electrical Characteristics table) |
NEC |
103 |
2SC3816 |
Class C, 940MHz 7 volt power transistor (This datasheet of NEM090701-07 is also the datasheet of 2SC3816, see the Electrical Characteristics table) |
NEC |
104 |
2SC387AG |
Silicon NPN epitaxial planar transistor, VHF amplifier, UHF oscillator applications fT=1000MHz |
TOSHIBA |
105 |
2SC400 |
Silicon NPN epitaxial planar RF transistor, fT=300MHz |
TOSHIBA |
106 |
2SC481 |
Silicon NPN epitaxial planar transistor, 27-50MHz transceiver power amplifier applications |
TOSHIBA |
107 |
2SC5058S |
25V,50mA, 300MHz high-frequency amplifier transistor |
ROHM |
108 |
2SC752G |
Silicon NPN epitaxial planar transistor, ultra high speed switching, computer, countor applications fT=400MHz |
TOSHIBA |
109 |
2SC979 |
Silicon NPN epitaxial planar RF transistor fT=250MHz |
TOSHIBA |
110 |
2SC979A |
Silicon NPN epitaxial planar RF transistor fT=250MHz |
TOSHIBA |
111 |
2SC998 |
Silicon NPN epitaxial planar VHF transistor ft=450MHz |
TOSHIBA |
112 |
3000 |
Silicon NPN common base transistor, high gain and efficiency, output power at frequencyes up to 3500MHz |
SGS Thomson Microelectronics |
113 |
3N159 |
MOS Field-Effect Transistor N-Channel Depletion Type, for RF up to 300MHz |
RCA Solid State |
114 |
3N187 |
MOS Field-Effect Transistor N-Channel Depletion Type with integrated gate-protection circuit, up to 300MHz |
RCA Solid State |
115 |
3N200 |
MOS Field-Effect Transistor N-Channel Depletion Type, for Military and Industrial Applications up to 500MHz |
RCA Solid State |
116 |
40340 |
High-Power 50MHz Emitter-Ballasted Silicon NPN Overlay Transistor |
RCA Solid State |
117 |
40341 |
High-Power 50MHz Emitter-Ballasted Silicon NPN Overlay Transistor |
RCA Solid State |
118 |
40467A |
MOS Field-Effect Transistor N-Channel Depletion Type for VHF, up to 220MHz |
RCA Solid State |
119 |
40673 |
Silicon Dual Insulated-Gate Field-Effect N-Channel Transistor, up to 400MHz |
RCA Solid State |
120 |
40819 |
MOS Field-Effect Transistor N-Channel Depletion Type, up to 250MHz |
RCA Solid State |
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