| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1.5KE120C |
Transient voltage suppressor. 1500 W. Breakdown voltage 108.0 V(min), 132 V(max). Test current 1.0 mA. |
Shanghai Sunrise Electronics |
| 2 |
128MX72 SDRAM (INTEL 1.2 VER BASE) |
128Mx72 SDRAM DIMM with PLL & Register based on Stacked 128Mx4, 4Banks 8K Ref., 3.3V SDRAMs with SPD Serial Presence Detec |
Samsung Electronic |
| 3 |
128MX72 SDRAM (INTEL 1.2 VER BASE) |
128Mx72 SDRAM DIMM with PLL & Register based on Stacked 128Mx4, 4Banks 8K Ref., 3.3V SDRAMs with SPD Data Sheet |
Samsung Electronic |
| 4 |
128MX72 SDRAM (INTEL 1.2 VER BASE) |
128Mx72 SDRAM DIMM with PLL & Register based on Stacked 128Mx4, 4Banks 8K Ref., 3.3V SDRAMs with SPD Data Sheet |
Samsung Electronic |
| 5 |
15KP100A |
Glass passivated junction transient voltage suppressor. Vrwm = 100 V. Vbr(min/max) = 111/128.0 V @ It = 5.0 mA. Ir = 10 uA. Vc = 162 V @ Ipp = 93 A. |
Panjit International Inc |
| 6 |
15KP100CA |
Glass passivated junction transient voltage suppressor. Vrwm = 100 V. Vbr(min/max) = 111/128.0 V @ It = 5.0 mA. Ir = 10 uA. Vc = 162 V @ Ipp = 93 A. |
Panjit International Inc |
| 7 |
15KP180 |
Glass passivated junction transient voltage suppressor. Vrwm = 180 V. Vbr(min/max) = 198/253.8 V @ It = 1.0 mA. Ir = 5 uA. Vc = 322 V @ Ipp = 47 A. |
Panjit International Inc |
| 8 |
15KP180A |
Glass passivated junction transient voltage suppressor. Vrwm = 180 V. Vbr(min/max) = 198/230.4 V @ It = 1.0 mA. Ir = 5 uA. Vc = 292 V @ Ipp = 51 A. |
Panjit International Inc |
| 9 |
15KP180C |
Glass passivated junction transient voltage suppressor. Vrwm = 180 V. Vbr(min/max) = 198/253.8 V @ It = 1.0 mA. Ir = 5 uA. Vc = 322 V @ Ipp = 47 A. |
Panjit International Inc |
| 10 |
15KP180CA |
Glass passivated junction transient voltage suppressor. Vrwm = 180 V. Vbr(min/max) = 198/230.4 V @ It = 1.0 mA. Ir = 5 uA. Vc = 292 V @ Ipp = 51 A. |
Panjit International Inc |
| 11 |
15KP190A |
Glass passivated junction transient voltage suppressor. Vrwm = 190 V. Vbr(min/max) = 209/243.2 V @ It = 1.0 mA. Ir = 5 uA. Vc = 308 V @ Ipp = 49 A. |
Panjit International Inc |
| 12 |
15KP190CA |
Glass passivated junction transient voltage suppressor. Vrwm = 190 V. Vbr(min/max) = 209/243.2 V @ It = 1.0 mA. Ir = 5 uA. Vc = 308 V @ Ipp = 49 A. |
Panjit International Inc |
| 13 |
15KP220 |
Glass passivated junction transient voltage suppressor. Vrwm = 220 V. Vbr(min/max) = 242/310.2 V @ It = 1.0 mA. Ir = 5 uA. Vc = 394 V @ Ipp = 38 A. |
Panjit International Inc |
| 14 |
15KP220C |
Glass passivated junction transient voltage suppressor. Vrwm = 220 V. Vbr(min/max) = 242/310.2 V @ It = 1.0 mA. Ir = 5 uA. Vc = 394 V @ Ipp = 38 A. |
Panjit International Inc |
| 15 |
1719-2 |
2 W, 2 V, 1700-1900 MHz common base transistor |
GHz Technology |
| 16 |
1K2S-N012 |
Input voltage 200-260 VAC;output voltage 12 VDC;output current:100 A; 1.2 KW enclosed parallel power supply |
FranMar International |
| 17 |
1K5S-N012 |
Input voltage 200-260 VAC;output voltage 12 VDC;output current:125 A; 1.5 KW enclosed parallel power supply |
FranMar International |
| 18 |
1N103 |
12 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 19 |
1N104 |
12 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 20 |
1N3154A |
Temperature-compensated silicon zener reference diode. Max voltage change 0.172 V. 500 W. |
Motorola |
| 21 |
1N3828 |
Zener regulator diode. Nom zener voltage 6.2 V. 1 W. |
Motorola |
| 22 |
1N4569 |
Low-level temperature-compensated zener reference diode. Max voltage 0.002 V. |
Motorola |
| 23 |
1N4574 |
Low-level temperature-compensated zener reference diode. Max voltage 0.002 V. |
Motorola |
| 24 |
1N4579 |
Low-level temperature-compensated zener reference diode. Max voltage 0.002 V. |
Motorola |
| 25 |
1N4584 |
Low-level temperature-compensated zener reference diode. Max voltage 0.002 V. |
Motorola |
| 26 |
1N4616UR-1 |
2.2 volt zener diode |
Compensated Devices Incorporated |
| 27 |
1N4735 |
6.2 V, 1 W silicon zener diode |
BKC International Electronics |
| 28 |
1N4735 |
1 W silicon zener diode. Nominal zener voltage 6.2 V. |
Fairchild Semiconductor |
| 29 |
1N4735 |
1 WATT, 6.2 Volts Silicon Glass Zener Diode |
ITT Semiconductors |
| 30 |
1N4735A |
6.2 V, 1 W silicon zener diode |
BKC International Electronics |
| | | |
