| No. |
Part Name |
Description |
Manufacturer |
| 121 |
1N5265BUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 62 V. Tolerance +-5%. |
Microsemi |
| 122 |
1N5265C |
62 V, 2.0 mA, zener diode |
Leshan Radio Company |
| 123 |
1N5265D |
62 V, 2.0 mA, zener diode |
Leshan Radio Company |
| 124 |
1N5265UR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 62 V. |
Microsemi |
| 125 |
1N5268A |
82 V, 1.5 mA, zener diode |
Leshan Radio Company |
| 126 |
1N5268AUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 82 V. Tolerance +-10%. |
Microsemi |
| 127 |
1N5268BUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 82 V. Tolerance +-5%. |
Microsemi |
| 128 |
1N5268C |
82 V, 1.5 mA, zener diode |
Leshan Radio Company |
| 129 |
1N5268D |
82 V, 1.5 mA, zener diode |
Leshan Radio Company |
| 130 |
1N5268UR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 82 V. |
Microsemi |
| 131 |
1N5344B |
8.2 V, 150 mA, 5 W glass passivated zener diode |
Fagor |
| 132 |
1N5349B |
12 V, 100 mA, 5 W glass passivated zener diode |
Fagor |
| 133 |
1N5349B |
12 V, 5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 134 |
1N5358B |
22 V, 50 mA, 5 W glass passivated zener diode |
Fagor |
| 135 |
1N5358B |
22 V, 5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 136 |
1N5372B |
62 V, 20 mA, 5 W glass passivated zener diode |
Fagor |
| 137 |
1N5372B |
62 V, 5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 138 |
1N5375B |
82 V, 15 mA, 5 W glass passivated zener diode |
Fagor |
| 139 |
1N5375B |
82 V, 5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 140 |
1N5525A |
0.4 W, low voltage avalanche diode. Nominal zener voltage 6.2 V. Test current 1.0 mAdc. +-10% tolerance. |
Jinan Gude Electronic Device |
| 141 |
1N5525B |
0.4 W, low voltage avalanche diode. Nominal zener voltage 6.2 V. Test current 1.0 mAdc. +-5% tolerance. |
Jinan Gude Electronic Device |
| 142 |
1N5528A |
0.4 W, low voltage avalanche diode. Nominal zener voltage 8.2 V. Test current 1.0 mAdc. +-10% tolerance. |
Jinan Gude Electronic Device |
| 143 |
1N5528B |
0.4 W, low voltage avalanche diode. Nominal zener voltage 8.2 V. Test current 1.0 mAdc. +-5% tolerance. |
Jinan Gude Electronic Device |
| 144 |
1N5528C |
0.4 W, low voltage avalanche diode. Nominal zener voltage 8.2 V. Test current 1.0 mAdc. +-2% tolerance. |
Jinan Gude Electronic Device |
| 145 |
1N571 |
12 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 146 |
1N5927B |
12 V, 1.5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 147 |
1N5933B |
22 V, 1.5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 148 |
1N5944 |
1.5 W, silicon zener diode. Zener voltage 62 V. Test current 6.0 mA. +-20% tolerance. |
Jinan Gude Electronic Device |
| 149 |
1N5944A |
1.5 W, silicon zener diode. Zener voltage 62 V. Test current 6.0 mA. +-10% tolerance. |
Jinan Gude Electronic Device |
| 150 |
1N5944B |
62 V, 1.5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
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