| No. |
Part Name |
Description |
Manufacturer |
| 181 |
1N753 |
400mW, 6.2 Volts Silicon Glass Zener Diode |
ITT Semiconductors |
| 182 |
1N753A |
6.2 V, 400 mW silicon linear diode |
BKC International Electronics |
| 183 |
1N753A |
500mW, silicon zener diode. Zener voltage 6.2 V. Test current 20 mA. +-5% tolerance. |
Jinan Gude Electronic Device |
| 184 |
1N753A-1 |
6.2 V, 400 mW silicon zener diode |
BKC International Electronics |
| 185 |
1N753B |
6.2 V, 20 mA, zener diode |
Leshan Radio Company |
| 186 |
1N753C |
500mW, silicon zener diode. Zener voltage 6.2 V. Test current 20 mA. +-2% tolerance. |
Jinan Gude Electronic Device |
| 187 |
1N753C |
6.2 V, 20 mA, zener diode |
Leshan Radio Company |
| 188 |
1N753D |
500mW, silicon zener diode. Zener voltage 6.2 V. Test current 20 mA. +-1% tolerance. |
Jinan Gude Electronic Device |
| 189 |
1N753D |
6.2 V, 20 mA, zener diode |
Leshan Radio Company |
| 190 |
1N756 |
8.2 V, 400 mW silicon linear diode |
BKC International Electronics |
| 191 |
1N756 |
500 mW silicon linear diode. Max zener impedance 8.0 Ohm, max zener voltage 8.2 V (Iz 20mA). |
Fairchild Semiconductor |
| 192 |
1N756 |
400mW, 8.2 Volts Silicon Glass Zener Diode |
ITT Semiconductors |
| 193 |
1N756A |
8.2 V, 400 mW silicon linear diode |
BKC International Electronics |
| 194 |
1N756A |
500mW, silicon zener diode. Zener voltage 8.2 V. Test current 20 mA. +-5% tolerance. |
Jinan Gude Electronic Device |
| 195 |
1N756A-1 |
8.2 V, 400 mW silicon zener diode |
BKC International Electronics |
| 196 |
1N756B |
8.2 V, 20 mA, zener diode |
Leshan Radio Company |
| 197 |
1N756C |
500mW, silicon zener diode. Zener voltage 8.2 V. Test current 20 mA. +-2% tolerance. |
Jinan Gude Electronic Device |
| 198 |
1N756C |
8.2 V, 20 mA, zener diode |
Leshan Radio Company |
| 199 |
1N756D |
500mW, silicon zener diode. Zener voltage 8.2 V. Test current 20 mA. +-1% tolerance. |
Jinan Gude Electronic Device |
| 200 |
1N756D |
8.2 V, 20 mA, zener diode |
Leshan Radio Company |
| 201 |
1N759 |
12 V, 400 mW silicon linear diode |
BKC International Electronics |
| 202 |
1N759A |
12 V, 400 mW silicon linear diode |
BKC International Electronics |
| 203 |
1N759A |
500mW, silicon zener diode. Zener voltage 12 V. Test current 20 mA. +-5% tolerance. |
Jinan Gude Electronic Device |
| 204 |
1N759A-1 |
12 V, 400 mW silicon zener diode |
BKC International Electronics |
| 205 |
1N759B |
12 V, 20 mA, zener diode |
Leshan Radio Company |
| 206 |
1N759C |
500mW, silicon zener diode. Zener voltage 12 V. Test current 20 mA. +-2% tolerance. |
Jinan Gude Electronic Device |
| 207 |
1N759C |
12 V, 20 mA, zener diode |
Leshan Radio Company |
| 208 |
1N759D |
12 V, 20 mA, zener diode |
Leshan Radio Company |
| 209 |
1N821 |
TEMPERATURECOMPENSATED SILICON ZENER REFERENCE DIODES 6.2 V, 400 mW |
Motorola |
| 210 |
1N821A |
TEMPERATURECOMPENSATED SILICON ZENER REFERENCE DIODES 6.2 V, 400 mW |
Motorola |
| | | |
