No. |
Part Name |
Description |
Manufacturer |
91 |
1N5234A |
6.2 V, 20 mA, zener diode |
Leshan Radio Company |
92 |
1N5234AUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 6.2 V. Tolerance +-10%. |
Microsemi |
93 |
1N5234BUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 6.2 V. Tolerance +-5%. |
Microsemi |
94 |
1N5234C |
6.2 V, 20 mA, zener diode |
Leshan Radio Company |
95 |
1N5234D |
6.2 V, 20 mA, zener diode |
Leshan Radio Company |
96 |
1N5234UR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 6.2 V. |
Microsemi |
97 |
1N5237 |
500 mW silicon zener diode. Nominal zener voltage 8.2 V. |
Fairchild Semiconductor |
98 |
1N5237 |
500mW, 8.2 Volts Silicon Glass Zener Diode |
ITT Semiconductors |
99 |
1N5237A |
8.2 V, 20 mA, zener diode |
Leshan Radio Company |
100 |
1N5237AUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 8.2 V. Tolerance +-10%. |
Microsemi |
101 |
1N5237BUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 8.2 V. Tolerance +-5%. |
Microsemi |
102 |
1N5237C |
8.2 V, 20 mA, zener diode |
Leshan Radio Company |
103 |
1N5237D |
8.2 V, 20 mA, zener diode |
Leshan Radio Company |
104 |
1N5237UR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 8.2 V. |
Microsemi |
105 |
1N5242 |
500mW, 12 Volts Silicon Glass Zener Diode |
ITT Semiconductors |
106 |
1N5242A |
12 V, 20 mA, zener diode |
Leshan Radio Company |
107 |
1N5242AUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 12 V. Tolerance +-10%. |
Microsemi |
108 |
1N5242BUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 12 V. Tolerance +-5%. |
Microsemi |
109 |
1N5242C |
12 V, 20 mA, zener diode |
Leshan Radio Company |
110 |
1N5242D |
12 V, 20 mA, zener diode |
Leshan Radio Company |
111 |
1N5242UR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 12 V. |
Microsemi |
112 |
1N5251 |
500mW, 22 Volts Silicon Glass Zener Diode |
ITT Semiconductors |
113 |
1N5251A |
22 V, 5.6 mA, zener diode |
Leshan Radio Company |
114 |
1N5251AUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 22 V. Tolerance +-10%. |
Microsemi |
115 |
1N5251BUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 22 V. Tolerance +-5%. |
Microsemi |
116 |
1N5251C |
22 V, 5.6 mA, zener diode |
Leshan Radio Company |
117 |
1N5251D |
22 V, 5.6 mA, zener diode |
Leshan Radio Company |
118 |
1N5251UR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 22 V. |
Microsemi |
119 |
1N5265A |
62 V, 2.0 mA, zener diode |
Leshan Radio Company |
120 |
1N5265AUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 62 V. Tolerance +-10%. |
Microsemi |
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