| No. |
Part Name |
Description |
Manufacturer |
| 1 |
0801-12 |
Marking for NE080190-12 part number, 90 NEC package |
NEC |
| 2 |
0804-12 |
Marking for NE080490-12 part number, 90 NEC package |
NEC |
| 3 |
08090 |
LDMOS RF Power Field Effect Transistor 90 W, 869-960 MHz |
Infineon |
| 4 |
0810-12 |
Marking for NE081090-12 part number, 90 NEC package |
NEC |
| 5 |
10500 |
500 W, 50 V, 1030-1090 MHz common base transistor |
GHz Technology |
| 6 |
1090MP |
90 W, 50 V, 1025-1150 MHz common base transistor |
GHz Technology |
| 7 |
1504-90E |
Delay 90 +/-4.5 ns, Fixed dip delay line Td/Tr=5 |
Data Delay Devices Inc |
| 8 |
1505-90A |
Delay 90 +/-5 ns, 5-TAP SIP delay line Td/Tr=3 |
Data Delay Devices Inc |
| 9 |
1513-90Y |
Delay 90 +/-4.5 ns, fixed SIP delay line Td/Tr=5 |
Data Delay Devices Inc |
| 10 |
1514-90Y |
Delay 90 +/-4.5 ns, fixed SIP delay line Td/Tr=5 |
Data Delay Devices Inc |
| 11 |
1515-90A |
Delay 90 +/-4.5 ns, fixed SIP delay line Td/Tr=10 |
Data Delay Devices Inc |
| 12 |
15KP190 |
Glass passivated junction transient voltage suppressor. Vrwm = 190 V. Vbr(min/max) = 209/267.4 V @ It = 1.0 mA. Ir = 5 uA. Vc = 340 V @ Ipp = 44 A. |
Panjit International Inc |
| 13 |
15KP190A |
Glass passivated junction transient voltage suppressor. Vrwm = 190 V. Vbr(min/max) = 209/243.2 V @ It = 1.0 mA. Ir = 5 uA. Vc = 308 V @ Ipp = 49 A. |
Panjit International Inc |
| 14 |
15KP190C |
Glass passivated junction transient voltage suppressor. Vrwm = 190 V. Vbr(min/max) = 209/267.4 V @ It = 1.0 mA. Ir = 5 uA. Vc = 340 V @ Ipp = 44 A. |
Panjit International Inc |
| 15 |
15KP190CA |
Glass passivated junction transient voltage suppressor. Vrwm = 190 V. Vbr(min/max) = 209/243.2 V @ It = 1.0 mA. Ir = 5 uA. Vc = 308 V @ Ipp = 49 A. |
Panjit International Inc |
| 16 |
1920A05 |
5 W, 26 V, 1930-1990 MHz common emitter transistor |
GHz Technology |
| 17 |
1920A12 |
12 W, 25 V, 1930-1990 MHz common emitter transistor |
GHz Technology |
| 18 |
1920A20 |
20 W, 25 V, 1930-1990 MHz common emitter transistor |
GHz Technology |
| 19 |
1920AB12 |
12 W, 25 V, 1930-1990 MHz common emitter transistor |
GHz Technology |
| 20 |
1920AB25 |
25 W, 25 V, 1930-1990 MHz common emitter transistor |
GHz Technology |
| 21 |
1920AB35 |
35 W, 25 V, 1930-1990 MHz common emitter transistor |
GHz Technology |
| 22 |
1920AB4 |
4 W, 25 V, 1930-1990 MHz common emitter transistor |
GHz Technology |
| 23 |
1920AB60 |
60 W, 25 V, 1930-1990 MHz common emitter transistor |
GHz Technology |
| 24 |
1920CD35 |
35 W, 25 V, 1930-1990 MHz common emitter transistor |
GHz Technology |
| 25 |
1920CD60 |
60 W, 25 V, 1930-1990 MHz common emitter transistor |
GHz Technology |
| 26 |
1N265 |
90 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 27 |
1N3769 |
90 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 28 |
1N4690 (DO35) |
Zener Voltage Regulator Diode |
Microsemi |
| 29 |
1N476 |
90 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 30 |
1N477 |
90 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| | | |
