| No. |
Part Name |
Description |
Manufacturer |
| 1 |
12C671 |
EPROM Memory Programming Specification |
Microchip |
| 2 |
12C672 |
EPROM Memory Programming Specification |
Microchip |
| 3 |
16C554 |
EPROM-Based 8-Bit CMOS Microcontroller |
Microchip |
| 4 |
16C62X |
EPROM-Based 8-Bit CMOS Microcontroller |
Microchip |
| 5 |
2N1711 |
EPITAXIAL PLANAR NPN |
ST Microelectronics |
| 6 |
2N2102 |
EPITAXIAL PLANAR NPN |
ST Microelectronics |
| 7 |
2N2857 |
Epitaxial planar NPN transistor intended for amplifier, oscillator and converter applications up to 500MHz |
SGS-ATES |
| 8 |
2N2906U |
EPITAXIAL PLANAR PNP TRANSISTOR |
Korea Electronics (KEC) |
| 9 |
2N3137 |
Epitaxial planar NPN transistor, designed for application as a Class-C, RF power amplifier |
SGS-ATES |
| 10 |
2N3600 |
Epitaxial planar NPN transistor designed High-Frequency oscillators and amplifiers |
SGS-ATES |
| 11 |
2N3713 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 12 |
2N3714 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 13 |
2N3715 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 14 |
2N3716 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 15 |
2N3789 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 16 |
2N3790 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 17 |
2N3791 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 18 |
2N3792 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 19 |
2N3839 |
Epitaxial planar NPN transistor intended for amplifier, oscillator and converter applications up to 500MHz, low noise |
SGS-ATES |
| 20 |
2N3866 |
Epitaxial planar NPN transistor designed for VHF-UHF class A, B or C amplifier circuits and oscillator applications |
SGS-ATES |
| 21 |
2N4401SC |
EPITAXIAL PLANAR NPN TRANSISTOR |
Korea Electronics (KEC) |
| 22 |
2N4403SC |
EPITAXIAL PLANAR PNP TRANSISTOR |
Korea Electronics (KEC) |
| 23 |
2N4427 |
Epitaxial planar NPN transistor designed for VHF class A, B or C amplifier and oscillator applications |
SGS-ATES |
| 24 |
2N4428 |
Epitaxial planar NPN transistor designed for VHF-UHF class C amplifier output stages in military an industrial communications applications |
SGS-ATES |
| 25 |
2N4932 |
Epitaxial silicon NPN planar RF power transistor of the overlay emitter electrode construction |
RCA Solid State |
| 26 |
2N4933 |
Epitaxial silicon NPN planar RF power transistor of the overlay emitter electrode construction |
RCA Solid State |
| 27 |
2N5109 |
Epitaxial planar NPN transistor, designed for CATV-MATV amplifier applications over a wide frequency range (40 to 860MHz) |
SGS-ATES |
| 28 |
2N5179 |
Epitaxial planar NPN transistor intended for low-noise tuned-amplifier and converter applications up to 500MHz |
SGS-ATES |
| 29 |
2N5190 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 30 |
2N5191 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| | | |
