No. |
Part Name |
Description |
Manufacturer |
31 |
2N5192 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
32 |
2N5193 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
33 |
2N5194 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
34 |
2N5195 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
35 |
2N5875 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
36 |
2N5876 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
37 |
2N5877 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
38 |
2N5878 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
39 |
2N6034 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
40 |
2N6035 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
41 |
2N6036 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
42 |
2N6037 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
43 |
2N6038 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
44 |
2N6039 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
45 |
2N6050 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
46 |
2N6051 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
47 |
2N6052 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
48 |
2N6053 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
49 |
2N6054 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
50 |
2N6055 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
51 |
2N6056 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
52 |
2N6057 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
53 |
2N6058 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
54 |
2N6059 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
55 |
2N6106 |
EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS |
Boca Semiconductor Corporation |
56 |
2N6106 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -80V. |
General Electric Solid State |
57 |
2N6107 |
EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS |
Boca Semiconductor Corporation |
58 |
2N6107 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -80V. |
General Electric Solid State |
59 |
2N6108 |
EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS |
Boca Semiconductor Corporation |
60 |
2N6108 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -60V. |
General Electric Solid State |
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